[12.27] [11.39] WIRE BONDS 0.215 [5.46] 0.065 [1.65] 1.50 [38.1] [13.9

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

[12.27] [11.39] WIRE BONDS 0.215 [5.46] 0.065 [1.65] 1.50 [38.1] [13.9

Datasheet Thumbnail

Top Searches for this datasheet

PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C109-Q DETECTORS INC.
[12.27] [11.39] WIRE BONDS 0.215 [5.46] 0.065 [1.65] 1.50 [38.1] [13.97] VIEWING ANGLE 0.295 [7.49] ANODE [0.46] CATHODE [0.46] HEADER QUARTZ WINDOW (WELDED)
0.340 [8.64] 0.230 [5.84] 0.209 [5.31] ACTIVE AREA 0.319 [8.10] ACTIVE AREA
TO-8
PACKAGE
ACTIVE AREA 42.86
FEATURES High speed U.V. enhanced capacitance Quartz window
DESCRIPTION PDU-C109-Q silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged TO-8 metal with flat quartz window cap.
RESPONSIVITY (A/W)
APPLICATIONS Spectrometers Fluorescent analysers U.V. meters Colorimeters SPECTRAL RESPONSE
1000 1100 1200
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +150 +125 +240
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 2.5x10
UNITS
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice.**f [FORM 100-PDU-C109-Q N/C]

[12.27] [11.39] WIRE BONDS 0.215 [5.46] 0.065 [1.65] 1.50 [38.1] [13.9

Top Searches for this datasheet

Other recent searches