0.215 [5.46] [12.27] [11.39] WIRE BONDS 0.065 [1.65] 1.500 [38.10]

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0.215 [5.46] [12.27] [11.39] WIRE BONDS 0.065 [1.65] 1.500 [38.10]

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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C108-Q DETECTORS INC.
0.215 [5.46] [12.27] [11.39] WIRE BONDS 0.065 [1.65] 1.500 [38.10]
[13.97] VIEWING ANGLE 0.295 [7.49] CATHODE [0.46] HEADER QUARTZ WINDOW (WELDED)
ANODE [0.46]
PHOTODIODE 0.265 [6.74] SQUARE 0.2472 [6.289] ACTIVE AREA
TO-8
PACKAGE
ACTIVE AREA 31.00
FEATURES High speed U.V. enhanced capacitance Quartz window
DESCRIPTION PDU-C108-Q silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged TO-8 metal with flat quartz window.
RESPONSIVITY (A/W)
APPLICATIONS Spectrometers Fluorescent analysers U.V. meters Colorimeters SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +150 +125 +240
1000
1100
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 4x10
UNITS
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice.**f [FORM 100-PDU-C108-Q N/C]
1200

0.215 [5.46] [12.27] [11.39] WIRE BONDS 0.065 [1.65] 1.500 [38.10]

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