0.113 [2.88] PHOTODIODE 120° VIEWING ANGLE OPTICAL EPOXY 0.2
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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C107 DETECTORS INC.
0.113 [2.88] PHOTODIODE
120° VIEWING ANGLE
OPTICAL EPOXY 0.235[5.97] 0.135[3.43] 0.123[3.12] 0.223[5.66] ACTIVE AREA ACTIVE AREA
CERAMIC PACKAGE
ACTIVE AREA 17.74
FEATURES U.V. enhanced Photoconductive High speed Ceramic package
DESCRIPTION PDU-C107 silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged lead ceramic substrate with clear U.V. transmitting epoxy glob top.
RESPONSIVITY (A/W)
APPLICATIONS U.V. exposure meter Water purification Fluorescence U.V. meters SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +100 +100 +240
1000
1100
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25 unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 3.8x10
UNITS
1000
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-C107
1200
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