[8.25] 0.250 [6.35] 0.358 [9.09] 0.035 [0.89] HEADER PHOTODIODE VIEWIN
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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C105 DETECTORS INC.
[8.25] 0.250 [6.35] 0.358 [9.09] 0.035 [0.89] HEADER PHOTODIODE VIEWING ANGLE WINDOW (WELDED) 0.030 [0.76] WIRE BONDS 0.168 [4.26] 0.075 [1.91] 0.500 [12.70]
0.200 [5.08] ANODE [0.46] CATHODE [0.46]
0.095 [2.41] 0.086 [2.18] ACTIVE AREA
TO-5 HERMETIC PACKAGE
ACTIVE AREA 4.48
FEATURES High speed U.V. enhanced capacitance U.V. window
DESCRIPTION PDU-C105 silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged hermetic TO-5 metal with U.V. transmitting window.
APPLICATIONS Spectrometers Fluorescent analysers U.V. meters Colorimeters SPECTRAL RESPONSE
RESPONSIVITY (A/W)
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +150 +125 +240
1000 1100 1200
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 1.3x10
UNITS
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice.**f [FORM 100-PDU-C105 N/C]
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