Silicon triple diffusion planar type darlington 0.7±0.1 Unit

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Silicon triple diffusion planar type darlington 0.7±0.1 Unit

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2SD1276, 2SD1276A
Silicon triple diffusion planar type darlington
0.7±0.1
Unit:
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
power amplification Complementary 2SB0950 2SB0950A Features
High forward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw
16.7±0.3
7.5±0.2
3.1±0.1
Emitter-base voltage (Collector open) Collector current
Peak collector current Collector power dissipation
25°C
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Symbol VCEO Collector-emitter voltage (Base open) Base-emitter voltage 2SD1276
2SD1276A
Collector-base cutoff current (Emitter open)
2SD1276
2SD1276A 2SD1276
Collector-emitter cutoff current (Base open)
2SD1276A
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency Turn-on time Storage time Fall time
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE2
VEBO
Absolute Maximum Ratings 25°C
Parameter Symbol VCBO VCEO Collector-base voltage (Emitter open) 2SD1276 Rating Unit
Solder (4.0)
1.4±0.1
4.2±0.2
1.3±0.2 0.5+0.2 -0.1
14.0±0.5
0.8±0.1
2SD1276A
2.54±0.3
Collector-emitter voltage 2SD1276 (Base open) 2SD1276A
5.08±0.5
Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
Tstg
+150
Conditions
Unit
ICBO ICEO
IEBO hFE1
hFE2
VCE(sat)1 VCE(sat)2 tstg
SJD00190BED
Publication date: February 2003
2SD1276, 2SD1276A
TC=25°C IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
VCE=3V
Collector power dissipation
Collector current
Collector current
(1)TC=Ta (2)With heat sink (3)With heat sink (4)Without heat sink (PC=2W)
25°C
TC=100°C
-25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=250
VCE=3V
Collector output capacitance (pF) (Common base, input open circuited)
25°C
TC=100°C
-25°C
0.01 0.01
Forward current transfer ratio
IE=0 f=1MHz TC=25°C
TC=100°C
25°C
-25°C
0.01
Collector current
Collector current
Collector-base voltage
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=1ms t=10ms
2SD1276A 2SD1276
10-1
0.01
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00190BED
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Silicon triple diffusion planar type darlington 0.7±0.1 Unit

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