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0.7±0.1 power amplification Features High collector base vol
Top Searches for this datasheet2SD1274A, 2SD1274B 0.7±0.1 power amplification Features High collector base voltage VCBO High-speed switching Full-pack package which installed heat sink with screw 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 Collector base voltage Collector emitter voltage 2SD1274A 2SD1274B 2SD1274A 2SD1274B Collector emitter voltage Emitter base voltage Collector current Collector power dissipation 25°C 25°C Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Symbol ICBO Collector cutoff current 2SD1274A 2SD1274B Collector emitter voltage Emitter base voltage Forward current transfer ratio Base emitter voltage Collector emitter saturation voltage Transition frequency Fall time Note) *:VCEO(sus) Test circuit VCBO VCES Solder (4.0) 1.4±0.1 16.7±0.3 3.1±0.1 4.2±0.2 1.3±0.2 0.5+0.2 -0.1 14.0±0.5 Absolute Maximum Ratings 25°C Parameter Symbol 0.8±0.1 Rating Unit 2.54±0.3 5.08±0.5 Base Collector Emitter EIAJ: SC-67 TO-220F Package VCEO VEBO Tstg +150 Conditions Unit VCEO(sus) VEBO VCE(sat) 60Hz 25mH IC(A) VCE(V) 2SD1274A, 2SD1274B TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=45mA VCE=4V 25°C Collector power dissipation Collector current Collector current 40mA 35mA 30mA 25mA 20mA 15mA TC=100°C -25°C 10mA Ambient temperature (°C) Collector emitter voltage Base emitter voltage Collector emitter saturation voltage VCE(sat) IC/IB=10 TC=100°C 25°C -25°C 0.03 0.01 0.01 0.03 10000 3000 10000 VCE=4V VCE(sat) Forward current transfer ratio 1000 Transition frequency (MHz) 3000 1000 VCE=10V f=10MHz TC=25°C TC=100°C 25°C -25°C 0.01 0.03 0.01 0.03 Collector current Collector current Collector current Area safe operation (ASO) repetitive pulse TC=25°C Area safe operation, horizontal operation f=15.75kHz, TC=25°C Area safe operation single pulse load curve discharge high-voltage rectifier tube during horizontal operation 10000 Collector output capacitance (pF) 3000 1000 IE=0 f=1MHz TC=25°C Collector current t=1ms 0.03 0.01 Collector current <1mA 1000 1000 Collector base voltage Collector emitter voltage Collector emitter voltage Thermal resistance Rth(t) (°C/W) 10-1 10-2 10-4 10-3 10-2 10-1 Time Rth(t) Without heat sink With heat sink 2SD1274A, 2SD1274B Request your special attention precautions using technical information semiconductors described this book products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd. 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