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power amplification Unit: 0.7±0.1 Features High fo
Top Searches for this datasheet2SD1266, 2SD1266A power amplification Unit: 0.7±0.1 Features High forward current transfer ratio which satisfactory linearity collector-emitter saturation voltage VCE(sat) Full-pack package which installed heat sink with screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 25°C Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Symbol VCEO Collector-emitter voltage (Base open) Base-emitter voltage 2SD1266 2SD1266A Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1266 2SD1266A 2SD1266 2SD1266A Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1 2.54±0.3 Absolute Maximum Ratings 25°C Parameter Symbol VCBO VCEO Collector-base voltage (Emitter open) 2SD1266 Rating Unit 16.7±0.3 7.5±0.2 3.1±0.1 Solder (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 -0.1 2SD1266A 14.0±0.5 0.8±0.1 Collector-emitter voltage 2SD1266 (Base open) 2SD1266A VEBO 5.08±0.5 Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package Tstg +150 Conditions Unit ICES ICEO IEBO hFE2 hFE1 0.375 VCE(sat) tstg Publication date: April 2003 SJD00283BED 2SD1266, 2SD1266A With heat sink With heat sink Without heat sink 25°C 25°C Collector power dissipation Collector current Collector current 80mA 100°C -25°C Ambient temperature (°C) Collector-emitter voltage Base-emitter voltage VCE(sat) Collector-emitter saturation voltage VCE(sat) IC/IB 100°C 25°C -25°C 0.01 0.01 Forward current transfer ratio 25°C Transition frequency (MHz) 100°C -25°C 25°C 0.01 0.01 Collector current Collector current Collector current Safe operation area repetitive pulse 25°C Without heat sink With heat sink Thermal resistance (°C/W) Collector current 2SD1266A 2SD1266 10-1 0.01 1000 10-2 10-4 10-3 10-2 10-1 Collector-emitter voltage Time SJD00283BED Request your special attention precautions using technical information semiconductors described this book products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd. Other recent searchesVCO-204TC - VCO-204TC VCO-204TC Datasheet STN442D - STN442D STN442D Datasheet MCM20014 - MCM20014 MCM20014 Datasheet LHE9553 - LHE9553 LHE9553 Datasheet HD74LV1GU04A - HD74LV1GU04A HD74LV1GU04A Datasheet
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