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power amplification Unit: 0.7±0.1 Features High fo


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2SD1266, 2SD1266A
power amplification
Unit:
0.7±0.1
Features
High forward current transfer ratio which satisfactory linearity collector-emitter saturation voltage VCE(sat) Full-pack package which installed heat sink with screw
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
Emitter-base voltage (Collector open) Collector current
Peak collector current Collector power dissipation
25°C
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Symbol VCEO Collector-emitter voltage (Base open) Base-emitter voltage 2SD1266
2SD1266A
Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open)
2SD1266
2SD1266A 2SD1266
2SD1266A
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
2.54±0.3
Absolute Maximum Ratings 25°C
Parameter Symbol VCBO VCEO Collector-base voltage (Emitter open) 2SD1266 Rating Unit
16.7±0.3
7.5±0.2
3.1±0.1
Solder (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
2SD1266A
14.0±0.5
0.8±0.1
Collector-emitter voltage 2SD1266 (Base open) 2SD1266A
VEBO
5.08±0.5
Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package
Tstg
+150
Conditions
Unit
ICES
ICEO
IEBO hFE2
hFE1
0.375
VCE(sat) tstg
Publication date: April 2003
SJD00283BED
2SD1266, 2SD1266A
With heat sink With heat sink Without heat sink 25°C
25°C
Collector power dissipation
Collector current
Collector current
80mA
100°C
-25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB
100°C 25°C
-25°C
0.01 0.01
Forward current transfer ratio
25°C
Transition frequency (MHz)
100°C -25°C
25°C
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse 25°C
Without heat sink With heat sink
Thermal resistance (°C/W)
Collector current
2SD1266A 2SD1266
10-1
0.01
1000
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00283BED
Request your special attention precautions using technical information semiconductors described this book
products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.

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