low-frequency power amplification vertical deflection output Complemen
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2SD1264, 2SD1264A
low-frequency power amplification vertical deflection output Complementary 2SB0940, 2S0940A
16.7±0.3
Unit:
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SD1264 (Base open) 2SD1264A Emitter-base voltage (Collector open) Collector current
Peak collector current Collector power dissipation
25°C
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Symbol VCBO VCEO Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
2SD1264
2SD1264A
Emitter-base voltage (Collector open) Base-emitter voltage
Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
Collector-emitter saturation voltage Transition frequency
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
2.54±0.3
Features
3.1±0.1
High collector-emitter voltage (Base open) VCEO Large collector power dissipation Full-pack package which installed heat sink with screw
7.5±0.2
Solder (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
Absolute Maximum Ratings 25°C
Parameter Symbol VCBO VCEO
14.0±0.5
0.8±0.1
Rating
Unit
5.08±0.5
VEBO
Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package
Tstg
+150
Conditions
Unit
VEBO ICBO IEBO hFE2
hFE1 VCE(sat)
Publication date: April 2003
SJD00180BED
2SD1264, 2SD1264A
TC=25°C IB=7mA
Collector power dissipation
Collector current
Collector current
(1)TC=Ta (2)With heat sink (3)With heat sink (4)Without heat sink (PC=2W)
TC=100°C
25°C -25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=10
TC=100°C
25°C
-25°C
0.01 0.01
VCE=10V
Forward current transfer ratio
VCE=5V f=1MHz TC=25°C
Transition frequency (MHz)
TC=100°C
25°C
-25°C
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=0.5ms
t=5ms
t=1ms
0.01
2SD1264A 2SD1264
10-1
0.001
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00180BED
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products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
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