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These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emit
Top Searches for this datasheetNSCT3906LT1G General Purpose Transistors These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO Value -5.0 -200 Unit mAdc http://onsemi.com COLLECTOR BASE EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Board (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction Storage Temperature Symbol RqJA RqJA Tstg +150 mW/°C °C/W Specific Device Code Date Code* Pb-Free Package (Note: Microdot either location) *Date Code orientation and/or overbar vary depending upon manufacturing location. mW/°C °C/W Unit SOT-23 CASE STYLE MARKING DIAGRAM Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. FR-5 0.75 0.062 Alumina 0.024 99.5% alumina. ORDERING INFORMATION Device NSCT3906LT1G NSCT3906LT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3,000 Tape Reel 10,000 Tape Reel information tape reel specifications, including part orientation tape sizes, please refer Tape Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 May, 2006 Rev. Publication Order Number: NSCT3906LT1/D NSCT3906LT1G ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Characteristic CHARACTERISTICS Collector -Emitter Breakdown Voltage -1.0 mAdc, Collector -Base Breakdown Voltage mAdc, Emitter -Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, -3.0 Vdc) Collector Cutoff Current (VCE Vdc, -3.0 Vdc) CHARACTERISTICS (Note Current Gain -0.1 mAdc, -1.0 Vdc) -1.0 mAdc, -1.0 Vdc) mAdc, -1.0 Vdc) mAdc, -1.0 Vdc) -100 mAdc, -1.0 Vdc) Collector -Emitter Saturation Voltage mAdc, -1.0 mAdc) mAdc, -5.0 mAdc) Base -Emitter Saturation Voltage mAdc, -1.0 mAdc) mAdc, -5.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB -5.0 Vdc, MHz) Input Capacitance (VEB -0.5 Vdc, MHz) Input Impedance -1.0 mAdc, Vdc, kHz) Voltage Feedback Ratio -1.0 mAdc, Vdc, kHz) Small -Signal Current Gain -1.0 mAdc, Vdc, kHz) Output Admittance -1.0 mAdc, Vdc, kHz) Noise Figure -100 mAdc, -5.0 Vdc, kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC -3.0 Vdc, Vdc, mAdc, -1.0 mAdc) (VCC -3.0 Vdc, mAdc, -1.0 mAdc) Cobo Cibo mmhos VCE(sat) VBE(sat) -0.65 -0.85 -0.95 -0.25 -0.4 V(BR)CEO V(BR)CBO V(BR)EBO -5.0 ICEX nAdc nAdc Symbol Unit Pulse Test: Pulse Width Duty Cycle 2.0%. http://onsemi.com NSCT3906LT1G +9.1 +0.5 10.6 DUTY CYCLE DUTY CYCLE 10.9 1N916 Total shunt capacitance test connectors Figure Delay Rise Time Equivalent Test Circuit Figure Storage Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 25°C 125°C CAPACITANCE (pF) CHARGE (pC) Cobo Cibo 5000 3000 2000 1000 IC/IB REVERSE BIAS (VOLTS) COLLECTOR CURRENT (mA) Figure Capacitance Figure Charge Data IC/IB IC/IB FALL TIME (ns) IC/IB TIME (ns) COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) Figure Turn Time Figure Fall Time http://onsemi.com NSCT3906LT1G TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE Vdc, 25°C, Bandwidth SOURCE RESISTANCE NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE NOISE FIGURE (dB) SOURCE RESISTANCE FREQUENCY (kHz) SOURCE RESISTANCE OHMS) Figure Figure PARAMETERS (VCE Vdc, kHz, 25°C) OUTPUT ADMITTANCE mhos) CURRENT GAIN COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) Figure Current Gain VOLTAGE FEEDBACK RATIO 10-4 INPUT IMPEDANCE OHMS) Figure Output Admittance COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) Figure Input Impedance Figure Voltage Feedback Ratio http://onsemi.com NSCT3906LT1G TYPICAL STATIC CHARACTERISTICS CURRENT GAIN (NORMALIZED) +125°C +25°C COLLECTOR CURRENT (mA) Figure Current Gain COLLECTOR EMITTER VOLTAGE (VOLTS) 25°C 0.01 0.02 0.03 0.05 0.07 BASE CURRENT (mA) Figure Collector Saturation Region 25°C VOLTAGE (VOLTS) VBE(sat) IC/IB -0.5 +25°C +125°C -1.0 +25°C -1.5 -2.0 VBE(sat) VCE(sat) +25°C +125°C +25°C VCE(sat) IC/IB COLLECTOR CURRENT (mA) TEMPERATURE COEFFICIENTS (mV/° COLLECTOR CURRENT (mA) Figure "ON" Voltages Figure Temperature Coefficients http://onsemi.com NSCT3906LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE VIEW 0.25 NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. 318-01 THRU OBSOLETE, STANDARD 318-08. MILLIMETERS 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 VIEW 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE BASE EMITTER COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 0.079 0.035 SCALE 10:1 0.031 inches *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. 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