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These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emit
Top Searches for this datasheetNSCT2907ALT1G General Purpose Transistors These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO Value -5.0 -600 Unit mAdc http://onsemi.com COLLECTOR BASE EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Board (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction Storage Temperature Symbol RqJA RqJA Tstg +150 mW/°C °C/W Specific Device Code Date Code* Pb-Free Package (Note: Microdot either location) *Date Code orientation and/or overbar vary depending upon manufacturing location. mW/°C °C/W Unit SOT-23 CASE STYLE MARKING DIAGRAM Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. FR-5 0.75 0.062 Alumina 0.024 99.5% alumina. ORDERING INFORMATION Device NSCT2907ALT1G NSCT2907ALT3G Package SOT-23 (Pb-Free) Shipping 3000 Tape Reel SOT-23 10,000 Tape Reel (Pb-Free) information tape reel specifications, including part orientation tape sizes, please refer Tape Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 May, 2006 Rev. Publication Order Number: NSCT2907ALT1/D NSCT2907ALT1G ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Characteristic CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note mAdc, Collector -Base Breakdown Voltage mAdc, Emitter -Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, VEB(off) -0.5 Vdc) Collector Cutoff Current (VCB Vdc, (VCB Vdc, 125°C) Base Cutoff Current (VCE Vdc, VEB(off) -0.5 Vdc) CHARACTERISTICS Current Gain -0.1 mAdc, Vdc) -1.0 mAdc, Vdc) mAdc, Vdc) -150 mAdc, Vdc) -500 mAdc, Vdc) (Note Collector -Emitter Saturation Voltage (Note -150 mAdc, mAdc) (Note -500 mAdc, mAdc) Base -Emitter Saturation Voltage (Note -150 mAdc, mAdc) -500 mAdc, mAdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain Bandwidth Product (Notes mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB -2.0 Vdc, MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Pulse Test: Pulse Width Duty Cycle 2.0%. defined frequency which |hfe| extrapolates unity. (VCC -6.0 Vdc, -150 mAdc, mAdc) (VCC Vdc, -150 mAdc, mAdc) toff Cobo Cibo VCE(sat) VBE(sat) -1.3 -2.6 -0.4 -1.6 V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO -0.010 nAdc -5.0 nAdc mAdc Symbol Unit INPUT RISE TIME P.W. INPUT RISE TIME P.W. -6.0 OSCILLOSCOPE RISE TIME 1N916 OSCILLOSCOPE RISE TIME Figure Delay Rise Time Test Circuit Figure Storage Fall Time Test Circuit http://onsemi.com NSCT2907ALT1G TYPICAL CHARACTERISTICS NORMALIZED CURRENT GAIN -1.0 125°C 25°C -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -100 -200 -300 -500 COLLECTOR CURRENT (mA) Figure Current Gain COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 -1.0 -100 -500 -0.6 -0.4 -0.2 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 Figure Collector Saturation Region VBE(off) -5.0 -7.0 -100 COLLECTOR CURRENT IC/IB 25°C TIME (ns) -200 -300 -500 -5.0 -7.0 IC/IB 25°C TIME (ns) -100 -200 -300 -500 COLLECTOR CURRENT (mA) Figure Turn-On Time Figure Turn-Off Time http://onsemi.com NSCT2907ALT1G TYPICAL SMALL-SIGNAL Characteristics NOISE FIGURE Vdc, 25°C -1.0 -500 -100 OPTIMUM SOURCE RESISTANCE NOISE FIGURE (dB) NOISE FIGURE (dB) -100 -500 -1.0 0.01 0.02 0.05 FREQUENCY (kHz) SOURCE RESISTANCE (OHMS) Figure Frequency Effects BANDWIDTH PRODUCT (MHz) Figure Source Resistance Effects CAPACITANCE (pF) -0.1 -1.0 -2.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 CURRENT-GAIN 25°C -5.0 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) COLLECTOR CURRENT (mA) Figure Capacitances Figure Current-Gain Bandwidth Product -1.0 25°C COEFFICIENT (mV/° -0.8 VOLTAGE (VOLTS) VBE(sat) IC/IB VBE(on) +0.5 -0.5 -1.0 -1.5 -2.0 VCE(sat) IC/IB RqVB RqVC VCE(sat) -0.6 -0.4 -0.2 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -100 -200 COLLECTOR CURRENT (mA) -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -100 -200 -500 COLLECTOR CURRENT (mA) Figure "On" Voltage Figure Temperature Coefficients http://onsemi.com NSCT2907ALT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE VIEW 0.25 NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. 318-01 THRU OBSOLETE, STANDARD 318-08. MILLIMETERS 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 VIEW 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE BASE EMITTER COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 0.079 0.035 SCALE 10:1 0.031 inches *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. 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