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These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emit
Top Searches for this datasheetNSCT2222ALT1G General Purpose Transistor These Pb-Free Devices MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO Value Unit mAdc http://onsemi.com COLLECTOR BASE EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Board (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction Storage Temperature Range Symbol RqJA RqJA Tstg +150 mW/°C °C/W Specific Device Code Date Code* Pb-Free Package (Note: Microdot either location) *Date Code orientation and/or overbar vary depending upon manufacturing location. mW/°C °C/W Unit SOT-23 CASE STYLE MARKING DIAGRAM Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. FR-5 0.75 0.062 Alumina 0.024 99.5% alumina. ORDERING INFORMATION Device NSCT2222ALT1G NSCT2222ALT3G Package SOT-23 (Pb-Free) Shipping 3000 Tape Reel SOT-23 10000 Tape Reel (Pb-Free) information tape reel specifications, including part orientation tape sizes, please refer Tape Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 May, 2006 Rev. Publication Order Number: NSCT2222ALT1/D NSCT2222ALT1G ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Characteristic CHARACTERISTICS Collector -Emitter Breakdown Voltage mAdc, Collector -Base Breakdown Voltage mAdc, Emitter -Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, VEB(off) Vdc) Collector Cutoff Current (VCB Vdc, (VCB Vdc, 125°C) Emitter Cutoff Current (VEB Vdc, Base Cutoff Current (VCE Vdc, VEB(off) Vdc) CHARACTERISTICS Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc, -55°C) mAdc, Vdc) (Note mAdc, Vdc) (Note mAdc, Vdc) (Note Collector -Emitter Saturation Voltage (Note mAdc, mAdc) mAdc, mAdc) Base -Emitter Saturation Voltage (Note mAdc, mAdc) mAdc, mAdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain Bandwidth Product (Note mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) mAdc, Vdc, kHz) Small -Signal Current Gain mAdc, Vdc, kHz) mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) mAdc, Vdc, kHz) Collector Base Time Constant mAdc, Vdc, 31.8 MHz) Noise Figure mAdc, Vdc, kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC Vdc, VBE(off) Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc) Cobo Cibo 0.25 mmhos 1.25 VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO 0.01 nAdc nAdc nAdc mAdc Symbol Unit Pulse Test: Pulse Width Duty Cycle 2.0%. http://onsemi.com NSCT2222ALT1G defined frequency which |hfe| extrapolates unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS DUTY CYCLE 2.0% DUTY CYCLE 2.0% 1N914 Scope rise time *Total shunt capacitance test jig, connectors, oscilloscope. Figure Turn-On Time Figure Turn-Off Time 1000 CURRENT GAIN 125°C 25°C -55°C COLLECTOR CURRENT (mA) Figure Current Gain COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C 0.005 0.01 0.02 0.03 0.05 BASE CURRENT (mA) Figure Collector Saturation Region http://onsemi.com NSCT2222ALT1G TIME (ns) COLLECTOR CURRENT (mA) IC/IB 25°C VEB(off) VEB(off) IC/IB 25°C TIME (ns) COLLECTOR CURRENT (mA) Figure Turn Time Figure Turn -Off Time OPTIMUM SOURCE RESISTANCE NOISE FIGURE (dB) NOISE FIGURE (dB) 0.01 0.02 0.05 FREQUENCY (kHz) SOURCE RESISTANCE (OHMS) Figure Frequency Effects Figure Source Resistance Effects CAPACITANCE (pF) CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 25°C COLLECTOR CURRENT (mA) REVERSE VOLTAGE (VOLTS) Figure Capacitances Figure Current-Gain Bandwidth Product http://onsemi.com NSCT2222ALT1G 25°C VBE(sat) IC/IB VBE(on) COEFFICIENT (mV/° VOLTAGE (VOLTS) -0.5 -1.0 -1.5 -2.0 VCE(sat) IC/IB COLLECTOR CURRENT (mA) -2.5 COLLECTOR CURRENT (mA) RqVB RqVC VCE(sat) +0.5 Figure "On" Voltages Figure Temperature Coefficients http://onsemi.com NSCT2222ALT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE VIEW 0.25 NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. 318-01 THRU OBSOLETE, STANDARD 318-08. MILLIMETERS 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 VIEW 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE BASE EMITTER COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 0.079 0.035 SCALE 10:1 0.031 inches *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. 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