N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICOND
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2N7000
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
POWER SEMICONDUCTOR
Efficient High Density Cell Design Approaching Million Cells Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current (ON) Fast Switching Speed
TO-92
4.45 4.46 12.5 0.41 3.43 2.42 1.14
4.70 4.70 0.55 3.68 2.67 1.40
Mechanical Data
Case: TO-92, Plastic Leads: Solderable MIL-STD-202, Method Connections: Diagram Marking: Type Number Weight: 0.18 gram (approx.)
Dimensions
Bottom View
Maximum Ratings
Drain-Source Voltage
25°C unless otherwise specified Characteristic Symbol VDSS VDGR VGSS Continuous Pulsed TSTG Value +150 Unit mW/°C
Drain-Gate Voltage 1.0M Gate-Source Voltage (pulsed) Drain Current (Note Total Power Dissipation Derating above 25°C Operating Storage Temperature Range Maximum Lead Temperature Soldering Purposes, 1.5mm from Case seconds Notes: Pulse width 300µs, duty cycle
DS11304 Rev.
2N7000
Electrical Characteristics 25°C unless otherwise specified
Characteristics Drain-Source Breakdown Voltage Drain Cutoff Current Gate-Body Leakage Current Gate-Source Threshold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-On Time Turn-Off Time Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(ON) CISS COSS CRSS toff Unit 15V, 0.5A, 10V, RGEN Test Condition 10µA 48V, ±15V, VGS, 1.0mA 10V, 0.5A
Characteristics
Characteristics (Note
Dynamic Characteristics
25V, 1.0MHz
Switching Characteristics
Thermal Characteristics
Thermal Resistance, Junction Ambient Notes: Pulse width 300µs, duty cycle RqJA 312.5
DS11304 Rev.
2N7000
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