15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs These N-C

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15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs These N-C

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RFP15N05L
15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA0522.
Features
15A, rDS(ON) 0.140 Design Optimized Gate Drives Driven from QMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics
Ordering Information
PART NUMBER RFP15N05L NOTE: PACKAGE TO-220AB BRAND RFP15N05L
High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
When ordering, entire part number.
Symbol
Packaging
JEDEC TO-220AB
DRAIN (TAB)
SOURCE DRAIN GATE
©2004 Fairchild Semiconductor Corporation
RFP15N05L, Rev.
RFP15N05L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified Parameter
Ratings 0.48
Units W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage 20k) (Note VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Above 25oC, Derate Linearly Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA (Figure 48V, 48V, 125oC 30V, 7.5A, 6.25 (Figures 0.140 2.083 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction Case
IGSS rDS(ON) CISS COSS CRSS td(ON) td(OFF)
±10V, 15A, (Figures 25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTE: Pulsed: pulse duration 300µs maximum, duty cycle Repititive rating: pulse width limited maximum junction temperature. SYMBOL 7.5A dISD/dt 100A/µs TEST CONDITIONS UNITS
©2004 Fairchild Semiconductor Corporation
RFP15N05L, Rev.
RFP15N05L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CONTINUOUS
Unless Otherwise Specified
25oC CURVES MUST DERATED LINEARLY WITH INCREASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON)
RFP15N05L
RFP15N06L
VDS, DRAIN SOURCE VOLTAGE 1000
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE FORWARD BIAS SAFE OPERATING AREA
IDS, DRAIN SOURCE CURRENT IDS, DRAIN SOURCE CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V 3.5V 2.5V VDS, DRAIN SOURCE VOLTAGE 7.5V
-40oC 125oC 25oC PULSE DURATION 80µs DUTY CYCLE 0.5%
-40oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% RESISTANCE 125oC 25oC
10V, PULSE DURATION 80µs DUTY CYCLE 0.5%
rDS(ON), DRAIN SOURCE
-40oC
DRAIN SOURCE CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
©2004 Fairchild Semiconductor Corporation
RFP15N05L, Rev.
RFP15N05L Typical Performance Curves
NORMALIZED GATE THRESHOLD VOLTAGE 250µA CAPACITANCE (pF)
Unless Otherwise Specified (Continued)
1600 1400 1200 1000 CRSS COSS CISS 1MHz CISS CRSS COSS
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE BVDSS
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE IG(REF) 0.5mA GATE SOURCE VOLTAGE BVDSS BVDSS
0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
(REF) (ACT) TIME (µs) (REF) (ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2004 Fairchild Semiconductor Corporation
RFP15N05L, Rev.
RFP15N05L Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2004 Fairchild Semiconductor Corporation
RFP15N05L, Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs These N-C

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