SO-8 P-Channel enhancement mode power field effect transistors produce

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SO-8 P-Channel enhancement mode power field effect transistors produce

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NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor
SO-8 P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
-7A, -30V. RDS(ON) 0.028 -10V RDS(ON) 0.045 -4.5V. High density cell design extremely RDS(ON). High power current handling capability widely used surface mount package.
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
25°C unless otherwise noted
NDS8435
(Note
Units
Maximum Power Dissipation
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDS8435 Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, -250 125°C Static Drain-Source On-Resistance -7.0 125°C -4.5 -5.8 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current -4.5, Forward Transconductance -7.0 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1500 -0.7 -1.5 -1.1 0.023 0.038 0.037 -100
CHARACTERISTICS (Note Gate Threshold Voltage -2.2 0.028 0.06 0.045
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -7.0 VGEN RGEN
NDS8435 Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions -2.1
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -2.1 -0.8
-1.2
J-TA
J-TA
RDS(ON
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 50oC/W when mounted copper. 105oC/W when mounted 0.04 copper. 125oC/W when mounted 0.006 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDS8435 Rev.
Typical Electrical Characteristics
-10V
DRAIN-SOURCE CURRENT
-6.0 -5.0-4.5
DRAIN-SOURCE ON-RESISTANCE
-4.0
-3.0V
-3.5
DS(on), NORMALIZED
-3.5
-4.0
-4.5 -5.0 -6.0
-3.0
-2.5
-0.5 -1.5 DRAIN-SOURCE VOLTAGE -2.5
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE
DS(ON), NORMALIZED
=-7.0A -10V
DS(on) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-10V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C) DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-10V
-55°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE
-250µA
DRAIN CURRENT
NORMALIZED
25°C
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDS8435 Rev.
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
-250µA
1.08 1.06 1.04 1.02 0.98 0.96 0.94
REVERSE DRAIN CURRENT
DSS, NORMALIZED
125°C
25°C
-55°C
0.01
0.001
JUNCTION TEMPERATURE (°C)
-VSD BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
4000
-7.0A
GATE-SOURCE VOLTAGE 2000 CAPACITANCE (pF)
-5.0V
-15V -10V
1000
DRAIN SOURCE VOLTAGE GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
d(on)
d(off)
VOUT
PULSE IDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDS8435 Rev.
Typical Electrical Thermal Characteristics (continued)
STEADY-STATE POWER DISSIPATION
-10V
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SO-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
-10V
4.5"x5" FR-4 Board Still
0.03
SINGLE PULSE Note 25°C
DRAIN-SOURCE VOLTAGE
COPPER MOUNTING AREA
0.01
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.05 0.02 0.01 Single Pulse
Figure Maximum Safe Operating Area.
.0001
r(t) Note
P(pk)
Duty Cycle,
.001
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDS8435 Rev.

SO-8 P-Channel enhancement mode power field effect transistors produce

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