ADE-208-1450A Rev.1 Sep. 2001 Features on-resistance RDS(on) -4.5
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HAT1059C
ADE-208-1450A Rev.1 Sep. 2001 Features
on-resistance RDS(on) -4.5 -1.5 RDS(on) -2.5 -1.5 RDS(on) -1.8 -1.5 Capable gate drive Small Package: CMFPAK-6
Outline
CMFPAK Index band Source Drain Drain Drain Drain Gate
Index band
HAT1059C
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Channel dissipation Channel temperature Storage temperature *Value FR4. Symbol VDSS VGSS Tstg
Ratings 0.65 +150
Unit
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage |yfs| Ciss Coss Crss td(on) td(off) VSDF -0.2 1080 -0.85 -1.0 -1.20 Unit -3.0 Test Conditions ±100 ±6.4 -1.5 -4.5 -1.5 -2.5 -1.5 -1.8 -1.5 -4.5 -1.5 6.66
Rev.1, Sep. 2001, page
HAT1059C
Main Characteristics
Power Temperature Derating
(mW)
Maximum Safe Operation Area -100
Test Condition When using
Channel Dissipation
Drain Current
-0.3 Operation this area -0.1 limited RDS(on)
(°C)
Ambient Temperature
-0.03 25°C -0.01 shot Pulse -100 -0.1 -0.3 Drain Source Voltage
*When using
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
Pulse Test
Drain Current
Drain Current
-25°C
25°C 75°C
Drain Source Voltage
-2.5 -0.5 -1.5 Gate Source Voltage
Rev.1, Sep. 2001, page
HAT1059C
Drain Source Saturation Voltage Gate Source Voltage -200 25°C Static Drain Source State Resistance Drain Current Pulse Test 25°C -1.8
VDS(on) (mV)
-100 -1.5
Drain Source Voltage
Drain Source State Resistance DS(on)
-2.5
-4.5
-0.5
-2.5 -7.5 Gate Source Voltage
-0.1
-1.0 Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test 0.15 -1.5 -0.5 -1.8 -1.5
Forward Transfer Admittance Drain Current Pulse Test 25°C -25°C
75°C
-2.5 0.05 -4.5 -0.5 -1.5
Case Temperature (°C)
Drain Current
Rev.1, Sep. 2001, page
HAT1059C
Typical Capacitance Drain Source Voltage
Dynamic Input Characteristics (nc)
10000
Capacitance (pF)
Drain Source Voltage
Ciss 1000
Coss Crss Drain Source Voltage
Gate Charge
Switching Characteristics 10000
Reverse Drain Current
Reverse Drain Current Souece Drain Voltage Pulse Test
-4.5
Switching Time (ns)
1000 td(on)
td(off)
0.001 0.01 Drain Current
25°C Source Drain Voltage
Rev.1, Sep. 2001, page
Gate Source Voltage
HAT1059C
Package Dimensions
Unit:
0.05
0.05
0.65
0.65
0.15 0.05
0.75 0.05
Hitachi Code JEDEC JEITA Mass (reference value)
CMFPAK-6 Conforms
Rev.1, Sep. 2001, page
HAT1059C
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
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further information write
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Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
Colophon
Rev.1, Sep. 2001, page
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