AAT8543 threshold P-channel MOSFET designed battery, cell phone, marke

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AAT8543 threshold P-channel MOSFET designed battery, cell phone, marke

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AAT8543
AAT8543 threshold P-channel MOSFET designed battery, cell phone, markets. Using AnalogicTech's ultra-high-density MOSFET process space-saving, small-outline, J-lead package, performance superior that normally found TSOP-6 footprint been squeezed into footprint SC70JW-8 package.
Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.2A 25°C On-Resistance: -4.5V 104m -2.5V
Applications
Battery Packs Battery-Powered Portable Equipment Cellular Cordless Telephones
SC70JW-8 Package
View
Absolute Maximum Ratings
25°C, unless otherwise noted. Symbol
TSTG
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range 25°C 70°C
Value
±4.2 ±3.3 -1.2
Units
Thermal Characteristics1
Symbol
RJA2
Description
Typical Junction-to-Ambient Steady State Maximum Junction-to-Ambient Seconds Typical Junction-to-Foot 25°C Maximum Power Dissipation 70°C
Units
°C/W °C/W °C/W
Based thermal dissipation from junction ambient while mounted with optimized layout. 5-second pulse approximates testing device mounted large multi-layer most applications. where foot thermal reference defined normal solder mounting surface device's leads. guaranteed design; however, determined design. Actual maximum continuous current limited application's design. Pulse test: Pulse Width 300µs. 8543.2005.04.1.0
AAT8543
P-Channel Power MOSFET Electrical Characteristics
25°C, unless otherwise noted. Symbol Description
Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1
Conditions
-250µA
Units
-4.5V, -4.2A -2.5V, -3.1A ID(ON) On-State Drain Current -4.5V, (pulsed) VGS(th) Gate Threshold Voltage VDS, -250µA IGSS Gate-Body Leakage Current ±12V, -20V IDSS Drain Source Leakage Current -16V, 70°C2 Forward Transconductance -5V, -4.2A Dynamic Characteristics2 Total Gate Charge -10V, 2.4, -4.5V Gate-Source Charge -10V, 2.4, -4.5V Gate-Drain Charge -10V, 2.4, -4.5V tD(ON) Turn-On Delay -10V, 2.4, -4.5V, Turn-On Rise Time -10V, 2.4, -4.5V, tD(OFF) Turn-Off Delay -10V, 2.4, -4.5V, Turn-Off Fall Time -10V, 2.4, -4.5V, Source-Drain Diode Characteristics Source-Drain Forward -4.2A Voltage1 Continuous Diode Current3
-0.6
±100 -1.3 -1.2
Pulse test: Pulse Width 300µs. Guaranteed design. subject production testing. Based thermal dissipation from junction ambient while mounted with optimized layout. 5-second pulse approximates testing device mounted large multi-layer most applications. where foot thermal reference defined normal solder mounting surface device's leads. guaranteed design; however, determined design. Actual maximum continuous current limited application's design.
8543.2005.04.1.0
AAT8543
P-Channel Power MOSFET Typical Characteristics
unless otherwise noted. Output Characteristics
Transfer Characteristics
4.5V
3.5V
-55°C 25°C 125°C
2.5V
1.5V
On-Resistance Drain Current
0.32
On-Resistance Gate-to-Source Voltage
0.25
4.2A
RDS(ON)
RDS(ON)
0.24 0.16 0.08
0.15 0.05
2.5V
4.5V
On-Resistance Junction Temperature
Threshold Voltage
Normalized RDS(ON)
VGS(th) Variance
4.5V 4.2A
250µA
-0.1 -0.2
-0.3
(°C)
8543.2005.04.1.0
AAT8543
P-Channel Power MOSFET Typical Characteristics
unless otherwise noted. Gate Charge
Source-Drain Diode Forward Voltage
4.2A
150°C
25°C
Charge (nC)
Capacitance
1000
Single Pulse Power, Junction Ambient
Capacitance (pF)
Ciss
Power
0.001 0.01 1000
Coss Crss
Time
Transient Thermal Response, Junction Ambient
Normalized Effective Transient Thermal Impedance
0.01 Single Pulse 0.001 0.0001
0.001
0.01
1000
Time
8543.2005.04.1.0
AAT8543
P-Channel Power MOSFET Ordering Information
Package
SC70JW-8
Marking1
JTXYY
Part Number (Tape Reel)2
AAT8543IJS-T1
Package Information
SC70JW-8
0.50 0.50 0.50
1.75 0.10 0.225 0.075 2.00 0.20
2.20 0.20
0.048REF 0.15 0.05
0.85 0.15
1.10
0.100
0.45 0.10 2.10 0.30
dimensions millimeters.
assembly date code. Sample stock generally held part numbers listed BOLD. 8543.2005.04.1.0
0.05 0.05
AAT8543
P-Channel Power MOSFET
AnalogicTech cannot assume responsibility circuitry other than circuitry entirely embodied AnalogicTech product. circuit patent licenses, copyrights, mask work rights, other intellectual property rights implied. AnalogicTech reserves right make changes their products specifications discontinue product service without notice, advise customers obtain latest version relevant information verify, before placing orders, that information being relied current complete. products sold subject terms conditions sale supplied time order acknowledgement, including those pertaining warranty, patent infringement, limitation liability. AnalogicTech warrants performance semiconductor products specifications applicable time sale accordance with AnalogicTech's standard warranty. Testing other quality control techniques utilized extent AnalogicTech deems necessary support this warranty. Specific testing parameters each device necessarily performed.
Advanced Analogic Technologies, Inc.
Arques Avenue, Sunnyvale, 94085 Phone (408) 737-4600 (408) 737-4611
8543.2005.04.1.0

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