NCHT RDS(ON) 8.5m TO-263AB 0.380 (9.65) 0.420 (10.67) 0
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GFB65N02
NCHT
RDS(ON) 8.5m
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
0.575 (14.60) 0.625 (15.88)
0.055 (1.39) 0.066 (1.68)
Dimensions inches (millimeters)
0.63 (17.02)
0.33 (8.38)
Seating Plate
-T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940)
0.120 (3.05) 0.155 (3.94)
0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30)
0.08 (2.032) 0.24 (6.096) 0.12 (3.05)
Mounting Layout
Mechanical Data
Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 1.3g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C Pulsed Drain Current Power Dissipation 150°C
25°C unless otherwise noted)
Symbol 25°C 100°C 25°C 100°C 25°C(2) Tstg
Limit
Unit
°C/W °C/W 10/1/01
Operating Junction Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Notes: Pulse width limited maximum junction temperature Surface mounted 1in2 2oz. (FR-4 material)
GFB65N02
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Max. Pulsed Diode Forward Current Diode Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
25°C unless otherwise noted)
Symbol BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
Test Condition 250µA VGS, 250µA ±20V 16V, VDS=16V, VGS=0V, TJ=125°C 10V, 4.5V, 10V, =10V, =4.5V, =32A 10V, 10V, VGEN 10V, 1.0MHZ
10.5 19.5 1920 1.15
±100 13.5
Unit
td(on) td(off) Ciss Coss Crss IRRM
25A, 40A, di/dt 100A/µs
Note: Pulse test; pulse width duty cycle Pulse width limited maximum junction temperature
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFB65N02
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain-to-Source Current
4.5V, 5.0V, 6.0V, 10.0
Drain Current
4.0V 3.5V
125°C 25°C -55°C
3.0V 2.5V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS(th) Gate-to-Source Threshold Voltage (Normalized)
Fig. Threshold Voltage Temperature
250µA 0.02
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.015
0.01
4.5V
0.005
10.0V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
0.05
Fig. On-Resistance Gate-to-Source Voltage
RDS(ON) On-Resistance
RDS(ON) On-Resistance (Normalized)
0.04
0.03
0.02 125°C 0.01 25°C
Junction Temperature (°C)
Gate-to-Source Voltage
GFB65N02
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
3000 2500
Fig. Capacitance
1MHZ Ciss
Gate-to-Source Voltage
Capacitance (pF)
2000
1500
1000 Coss Crss
Charge (nC)
Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
0.05 0.02, Single Pulse Duty Cycle, t1/t2 RJC(norm) *RJC 2.2°C/W RJC(t) 0.01 0.0001 0.001 0.01
Source Current
125°C
25°C
-55°C
Source-to-Drain Voltage
Pulse Duration (sec.)
Fig. Power Pulse Duration
1000 Single Pulse 2.2°C/W 25°C 1000
Fig. Maximum Safe Operating Area
Drain Current
Power
Single Pulse 25°C
100ms
0.0001 0.001 0.01
Pulse Duration (sec.)
Drain-Source Voltage
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