Silicon Transistor Very High-Definition DisplayHorizontal Deflect
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201R
Silicon Transistor
Very High-Definition DisplayHorizontal Deflection Output Applications
Features speed(tf=100ns typ). breakdown voltage(VCBO=1500V). high speed damper diode package fr=0.2µs max) reliability(Adoption process). MBIT process. unit 1500 +150 ICBO VCEO(sus) IEBO (sat) (sat) hFE(1) hFE(2) tstg VF(1) VF(2) VCE=1500V IE=0 IC=100mA IB=0 VEB= IC=0 IC=16V IB=4A IC=16V IB=4A VCE=5V IC=1.0A VCE=5V IC=16A IC=12A IB1=2.4A IB2=-4.8 IC=12A IB1=2.4A IB2=-4.8 IF=10A IF=20A IF=-IR=100mA IF=100mA Package Dimensions Switching Time Test Circuit
TO-3JML(unit:mm)
20.0
Absoulute Maximum Ratings Ta=25°C Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Diode Forward Current Peak Diode Forward Current Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Saturation Voltage Saturation Voltage Current Gain Storage Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Diode Forward Recovery Time VCBO VCEO VEBO Tstg
PW100µs, dudt50% Tc=25°C
unit
DC<1% INPUT OUTPUT
26.0
PW=20µs
20.7
1.75
100µ
470µ
5.45
5.45
VBE=-5V
VCC=200V
5.45
5.45
Base Collectter Emitter
Specifications information herin subject change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, JAPAN
950801TM2fXHD
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