Volts Amps Harris FSC260R total dose: kRAD(Si) within pre-radiati

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Volts Amps Harris FSC260R total dose: kRAD(Si) within pre-radiati

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MX043J MX043G
Volts Amps
Harris FSC260R total dose: kRAD(Si) within pre-radiation parameter limits dose rate: RAD(Si)/sec 80%BVDSS typical dose rate: 1012 RAD(Si)/sec typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: nA/RAD(Si)/sec typical rated Safe Operating Area Curve Single event Effects rugged polysilicon gate cell structure with ultrafast body diode inductance surface mount power package available with "J-leads" (MX043J) "gullwing-leads" (MX043G) very thermal resistance reverse polarity available upon request suffix "R"st
Maximum Ratings (unless otherwise specified) DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted Source)
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SYMBOL BVDSS BVDGR VGSM ID25 ID100 Tstg MAX. +/-20 +/-30 +125 +125 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts Amps Amps grams VDSmax 200V 200V 160V 100V
Drain-to-Gate Breakdown Voltage Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
RGS=
100°
Peak Drain Current, pulse width limited TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction Case Weight SINGLE EVENT EFFECTS SAFE OPERATING AREA (SEESOA) Species typical (MeV/mg/cm)
Notes
typical range
-20V -10V -15V -20V
Pulse test, duty cycle Microsemi Corp. does manufacture mosfet die; contact company details.
Datasheet# MSC0857
MX043J MX043G
Electrical Parameters (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted Source) Temperature Coefficient Drain-to-Source Breakdown Voltage Gate Threshold Voltage
SYMBOL
DSS/TJ GS(th)
CONDITIONS
TYP.
UNIT
125° -55° 125° 125° 125° 0.050 0.093
Gate-to-Source Leakage Current IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage Reverse Recovery MechanicalTime (Body Diode) Outline ShelFitIDSS RDS(on) Ciss Coss Crss Td(on) td(off) Qg(on)
VDC, 12V,
0.043 4400
2.35
100V,
-di/dt A/µs,
100% (Known-Good-Die) SCREENING
100% probe ambient= BVDSS, IDSS, IGSS, VSD, RDSon 100% Visual Inspection i.a.w. method 2072 MIL-STD-750
ELEMENT EVALUATION
Wafer Evaluation Testing (WLAT) i.a.w. method 5001 MIL-STD-750, including Unclamped Inductive Switching (IAS) i.a.w. method 3470 MIL-STD-750 peak= 100µH, Gate Stress Test VGS= Vdc. Safe Operating Area i.a.w. method 3474 MIL-STD-750 VDS= High Temperature Gate Bias i.a.w. method 1042 cond.B MIL-STD-750: ambient= 150° Drain shorted Source High Temperature Reverse Bias i.a.w. method 1042 cond.A MIL-STD-750: ambient= 150° Gate shorted Source VDS= Final Electrical Testing ambient= 125° -55° Temperature Cycling i.a.w. method 1051 MIL-STD-750, cycles, -55° +150° Group Electrical Testing including dynamic parameters Steady State Operational Life Bias i.a.w. method 1042 cond.A MIL-STD-750: 1000 ambient= 150° Gate shorted Source VDS= Final Electrical Testing ambient= 125° -55° Attach Evaluation i.a.w. method 2017 MIL-STD-750 Bond Strength Evaluation i.a.w. 2037 MIL-STD-750
RADIATION EVALUATION
Total Dose Irradiation i.a.w. method 1019 MIL-STD-750, dose= kRAD, Drain shorted Source, VGS= Total Dose Irradiation i.a.w. method 1019 MIL-STD-750, dose= kRAD, Gate shorted Source, VDS= 160V Evaluation criteria: degradation electrical parameters exceeding data sheet limits allowed after total dose irradiation.
100% SCREENING
Internal Visual (Precap) Inspection i.a.w. method 2069 2072 MIL-STD-750 Temperature Cycling i.a.w. method 1051 MIL-STD-750, cycles, -55° +125° Thermal Response i.a.w. method 3161 MIL-STD-750 High Temperature Gate Bias i.a.w. method 1042 cond.B MIL-STD-750: ambient= 125° Drain shorted Source High Temperature Reverse Bias i.a.w. method 1042 cond.A MIL-STD-750: ambient= 125° Gate shorted Source Final electrical Testing i.a.w. this data sheet (100% parameters sample (22/0) testing dynamic parameters parameters temperature extremes)
QUALIFICATION INSPECTION
Thermal Resistance i.a.w. method 3161 MIL-STD-750 sample size= devices/0 rejects Solderability i.a.w. method 2026 MIL-STD-750 sample size= devices/0 rejects Temperature Cycling i.a.w. method 1051 MIL-STD-750, cycles, -55° +125° sample size devices/0 rejects Intermittent Operation Life i.a.w. method 1042D MIL-STD-750 with 2000 cycles (monitoring thermal response shift) sample= devices/0 rejects Steady State Operation Life i.a.w. method 1042A MIL-STD-750 115° min. 1000 sample= devices/0 rejects Steady state Gate Life i.a.w. method 1042B MIL-STD-750 115° min. 1000 hrs. sample= devices/0 rejects Safe Operating Area i.a.w. method 3474 MIL-STD-750 (monitoring thermal response shift) sample size= devices/0 rejects Shock i.a.w. method 2016 MIL-STD-750 sample size= devices/0 rejects Vibration i.a.w. method 2056 MIL-STD-750 sample size= devices/0 rejects Acceleration i.a.w. method 2006 MIL-STD-750 sample size= devices/0 rejects X-ray, view attach area axis) sample= devices/0 rejects Humidity ????? sample size= devices/0 rejects

Volts Amps Harris FSC260R total dose: kRAD(Si) within pre-radiati

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