RODUCT REVIEW DESCRIPTION FEATURES Microsemi .COM
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MS1077
RODUCT REVIEW
DESCRIPTION
FEATURES
Microsemi .COM
MS1077 Class epitaxial silicon planar transistor designed primarily communications. This device utilizes emitter ballasting achieve extreme ruggedness under severe operating conditions.
IMPORTANT: most current data, consult MICROSEMI's website: http://www.microsemi.com
Optimized Volts -30dB Common Emitter Gold Metallization Gain
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
Applications
ABSOLUTE MAXIMUM RATINGS (TCASE 25°C)
Symbol VCBO VCEO VEBO PDISS TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value +200 +150
Unit
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
MS1077 MS1077
Copyright 2000 MSC1610.PDF 2000-11-06
Microsemi
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Page
MS1077
RODUCT REVIEW
Microsemi .COM
STATIC ELECTRICAL SPECIFICATIONS (TCASE 25°C
Symbol BVCES BVCEO BVEBO ICES
Test Conditions
Min.
MS1077 Typ.
Max.
Units
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE 25°C
Symbol
Test Conditions
POUT POUT POUT POUT Note: 30.00 MHz, 30.01
Min.
MS1077 Typ.
Max.
Units
ELECTRICALS ELECTRICALS
Copyright 2000 MSC1610.PDF 2000-11-06
Microsemi
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Page
MS1077
RODUCT REVIEW
Microsemi .COM
PACKAGE DATTA PACKAGE DATTA
Copyright 2000 MSC1610.PDF 2000-11-06
Microsemi
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Page
MS1077
RODUCT REVIEW
Microsemi .COM
NOTES NOTES
Copyright 2000 MSC1610.PDF 2000-11-06
Microsemi
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Page
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