MICROWAVE TRANSISTORS APPLICATIONS Features VOLTS POUT WATTS MINI
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MS1226
MICROWAVE TRANSISTORS APPLICATIONS Features
VOLTS POUT WATTS MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
MS1226 epitaxial silicon planar transistor designed primarily communications. This device utilizes emitter ballasting improved ruggedness reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO PDISS
Parameter
Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
+200 +150
Unit
Thermal Data
RTH(J-C) Junction-case Thermal Resistance
MSC0943.PDF 10-28-98
MS1226
ELECTRICAL SPECIFICATIONS (Tcase
STATIC
Symbol
BVcbo BVces BVceo BVebo Icbo
Test Conditions Min.
Value Typ.
Max.
-1.0
Unit
DYNAMIC DYNAMIC
Symbol
POUT Condition
Test Conditions Min.
0.48W 0.48W 0.48W
Value Typ.
Max.
Unit
MSC0943.PDF 10-28-98
MS1226
PACKAGE MECHANICAL DATA
MSC0943.PDF 10-28-98
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