N-Channel Enhancement Mode MOSFET Features Advanced trench proces

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N-Channel Enhancement Mode MOSFET Features Advanced trench proces

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AF2302N
N-Channel Enhancement Mode MOSFET Features
Advanced trench process technology High density cell design ultra on-resistance Excellent thermal electrical capabilities Compact profile SOT-23 package
(on), VGS@4.5V, IDS@3.6A =65m. (on), VGS@2.5V, IDS@3.1A =95m.
Assignments
(Top View)
Descriptions
Name Description Gate Source Drain
Ordering information
Feature :MOSFET 2302N Package SOT23 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
Block Diagram
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF2302N
N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings unless otherwise noted)
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction Storage Temperature Range Rating 1.25 +150 +150 Units
Thermal Performance
Symbol Parameter Lead Temperature (1/8" from case) Junction Ambient Thermal Resistance (PCB mounted) Limit Units
Note: Surface mounted board sec.
Electrical Characteristics Rate ID=2.4A, (TA=25oC unless otherwise noted)
Symbol Static BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistance Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VDS= VGS, ID=250uA VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=5V, VGS=4.5V VDS=5V, ID=3.6A VDS=10V, ID=3.6A, VGS=4.5V VDD=10V, RL=10, ID=1A, VGEN=4.5V, RG=6 VDS=10V, VGS=0V, f=1.0MHz Min. 0.45 Limits Typ. 0.65 0.75 Max. ±100 Unit
VGS(TH) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage ID(ON) On-State Drain Current Forward Tranconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) Turn-On Delay Time Turn-On Rise Time td(off) Turn-Off Delay Time Turn-Off Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
Note: Pulse test: pulse width 300uS, duty cycle
IS=1.0A, VGS=0V
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF2302N
N-Channel Enhancement Mode MOSFET Marking Information
(Top View) SOT23 Device Code (See Appendix) Date code Year Week(A~Z)
Appendix Part Number AF2302N
Package SOT23-3
Device Code
Switching Test Circuit
VOUT
VGEN
Switching Waveforms
td(on) td(off) toff
Output, VOUT
INVERTED
Input, PULSE WIDTH
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF2302N
N-Channel Enhancement Mode MOSFET Package Information
Symbol
Dimensions Millimeters Min. 1.00 0.00 1.00 0.35 0.10 2.70 1.40 1.70 2.40 0.30 Nom. 1.20 1.15 0.175 2.90 1.60 2.00 2.70 Max. 1.40 0.10 1.30 0.50 0.25 3.10 1.80 2.30 3.00 0.55
Dimensions Inches Min. 0.039 0.000 0.039 0.014 0.004 0.106 0.055 0.067 0.094 0.012 Nom. 0.047 0.045 0.007 0.114 0.063 0.079 0.106 Max. 0.055 0.004 0.051 0.020 0.010 0.122 0.071 0.091 0.118 0.022
Anachip Corp. www.anachip.com.tw
Rev. 2004

N-Channel Enhancement Mode MOSFET Features Advanced trench proces

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