N-CHANNEL 600V 0.38 TO-220 I2SPAK TO-247 Zener-Protected SuperMESHMOSF
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STP16NK60Z STB16NK60Z-S STW16NK60Z
N-CHANNEL 600V 0.38 TO-220 I2SPAK TO-247 Zener-Protected SuperMESHMOSFET
TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z
VDSS
RDS(on) 0.42 0.42 0.42
TYPICAL RDS(on) 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
I2SPAK
TO-247
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES
ORDER CODE
PART NUMBER STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE
March 2004
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STP16NK60Z STB16NK60Z-S STW16NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source (HBM-C= 100pF, 1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 1.51 6000 Unit W/°C V/ns
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, TJMAX. Limited only maximum temperature allowed
THERMAL DATA
TO-220/ Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 0.66 TO-247 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
2/11
STP16NK60Z STB16NK60Z-S STW16NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 3.75 0.38 Min. 0.42 Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Coss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 2650 Max. Unit
480V (Resistive Load see, Figure 480V,
SOURCE DRAIN DIODE
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 25°C (see test circuit, Figure di/dt A/µs 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
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STP16NK60Z STB16NK60Z-S STW16NK60Z
Safe Operating Area Thermal Impedance
Safe Operating Area TO-247
Thermal Impedance TO-247
Output Characteristics
Transfer Characteristics
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STP16NK60Z STB16NK60Z-S STW16NK60Z
Transconductance Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
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STP16NK60Z STB16NK60Z-S STW16NK60Z
Source-drain Diode Forward Characteristics Normalized BVDSS Temperature
Maximum Avalanche Energy Temperature
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STP16NK60Z STB16NK60Z-S STW16NK60Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
7/11
STP16NK60Z STB16NK60Z-S STW16NK60Z
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
8/11
STP16NK60Z STB16NK60Z-S STW16NK60Z
I2SPAK MECHANICAL DATA
MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568
DIM.
9/11
STP16NK60Z STB16NK60Z-S STW16NK60Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
10/11
STP16NK60Z STB16NK60Z-S STW16NK60Z
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