4N600(3600) Description Linear n-channel power field effect

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4N600(3600) Description Linear n-channel power field effect

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N-Channel Field Effect Transistor
4N600(3600)
Description
Linear n-channel power field effect transistors produced using high cell density DMOS technology These devices particularly suited high voltage applications such automotive other battery powered circuits where fast switching, in-line power loss resistance transistors needed. TO-220 offered 3-pin universally preferred commercial-industrial applications power dissipation level approximately watts. Also, available surface mount power package with power dissipation Watts
Features
Critical Electrical parameters specified elevated Temp. Rugged internal source-drain diode eliminate need external Zener diode transient suppresser Super high density cell design extremely RDS(ON)
VDSS 600V (ON) 4.0A Ordering Information
Device
4N600T 4N600S
Package
TO-220 TO-263
Temp.
150°C 150°C
Absolute Maximum Rating
Symbol
(TC=25°C) (TC=100°C) VGSV TSTG
Parameter
Drain Current -Continues -Pulsed Gate Source Voltage Total Power Dissipation =25°C Derate above 25°C Operating Storage Temperature Range
0.59
Unit
W/°C
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
4N600(3600)
Electrical Characteristics
Symbol
IDSS VGS(TH) RDS(ON) IGSS 25°C unless otherwise specified)
Parameter
Zero Gate Voltage Drain Current Drain-to-Source Breakdown Gate Threshold Voltage Static Drain Voltage
Conditions
VDS=600V VGS=0V ID=100µA, VGS=0 VDS=VGS ID=250µA VGS=10V, ID=2.4A
Units
-100
Gate-to-Source Forward Leakage VGS=20V Gate-to-Source Reverse Leakage VGS=-20V Forward Tranconductance VDS=100V, =2.4A Input Capacitance CISS VDS= 25V, VGS=0V Output Capacitance COSS F=1.0 Reverse Tras. Capacitance CRSS Turn-ON Delay Time tD(ON) VDD=300V Turn-ON Rise Time ID=2.4A, RGEN=12 Turn-OFF Delay Time td(off) RD=74 Turn-OFF Fall Time Maxim Continuous Drain source Diode Forward Current Drain Source Diode VGS=0V (note) Forward Voltage IS=4A THERMAI CHRACTERISTICS Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Note: Pulse Test: Pulse With Duty Cycle 2.0%
1.50
°C/W °C/W
Advance Information- These data sheets contain descriptions products that development. specifications based engineering calculations, computer simulations and/ initial prototype evaluation. Preliminary Information- These data sheets contain minimum maximum specifications that based initial device characterizations. These limits subject change upon completion full characterization over specified temperature supply voltage ranges.
application circuit examples only explain representative applications devices intended guarantee circuit design permit industrial property right other rights execute. Linear takes responsibility problems related industrial property right resulting from contents shown data book. Typical parameters vary different applications. Customer's technical experts must validate operating parameters including Typical" each customer application.
LIFE SUPPORT NUCLEAR POLICY Linear products authorized should used within life support systems which intended surgical implants into body support sustain life, aircraft, space equipment, submarine, nuclear facility applications without specific written consent Linear President.
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com

4N600(3600) Description Linear n-channel power field effect

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