IRLMS1902 HEXFET® Power MOSFET Generation Technology Micro6

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IRLMS1902 HEXFET® Power MOSFET Generation Technology Micro6

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91540C
IRLMS1902
HEXFET® Power MOSFET
Generation Technology Micro6 Package Style Ultra RDS(on) N-Channel MOSFET
VDSS
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET® power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro6 package with customized leadframe produces HEXFET® power MOSFET with RDS(on) less than similar size SOT-23. This package ideal applications where printed circuit board space premium. It's unique thermal design RDS(on) reduction enables current-handling increase nearly 300% compared SOT-23.
RDS(on) 0.10
View
Micro6
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, 4.5V Continuous Drain Current, 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
Units
mW/°C
V/ns
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Min.
Typ.
Units
°C/W
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IRLMS1902
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. Typ. Max. Units Conditions 250µA 0.032 V/°C Reference 25°C, 0.10 4.5V, 2.2A 0.17 2.7V, 1.1A 0.70 VGS, 250µA 10V, 1.1A 16V, 16V, 125°C -100 -12V 2.2A 0.97 4.5V, Fig. 2.2A 4.4, Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.2A, 25°C, 2.2A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig. 150°C
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec.
2.2A, di/dt 110A/µs, V(BR)DSS,
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IRLMS1902
7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V
Drain-to-Source Current
Drain-to-Source Current
7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V
1.75V
1.75V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
2.2A
Drain-to-Source Current
20µs PULSE WIDTH
4.5V
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLMS1902
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
2.2A
Capacitance (pF)
Ciss
Coss Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLMS1902
4.5V
4.5V
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
0.50
10b. Switching Time Waveforms
Thermal Response thJA
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLMS1902
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-channel HEXFET® power MOSFETs
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IRLMS1902
Package Outline
3.00 (.118 2.80 (.111
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
0.95 (.0375 (1.06 (.042
1.75 (.068 1.50 (.060
3.00 (.118 2.60 (.103
2.20 (.087
0.95 .0375
0.50 (.019 0.35 (.014
0.65 (.025
0.15 (.006
1.30 (.051 0.90 (.036 -C0.15 (.006 MAX. 1.45 (.057 0.90 (.036 0.10 (.004 SURFACES
0.20 (.007 0.09 (.004
0.60 (.023 0.10 (.004
NOTES DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOW MILLIMETERS (INCHES).
Part Marking Information
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IRLMS1902
Tape Reel Information
FEED DIRECTION
NOTES OUTLINE CONFORMS EIA-481 EIA-541.
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
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IRLMS1902 HEXFET® Power MOSFET Generation Technology Micro6

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