IRLMS1503 HEXFET® Power MOSFET Generation Technology Micro6

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IRLMS1503 HEXFET® Power MOSFET Generation Technology Micro6

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91508D
IRLMS1503
HEXFET® Power MOSFET
Generation Technology Micro6 Package Style Ultra RDS(on) N-Channel MOSFET
VDSS
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET® power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro6 package with customized leadframe produces HEXFET® power MOSFET with RDS(on) less than similar size SOT-23. This package ideal applications where printed circuit board space premium. It's unique thermal design RDS(on) reduction enables current-handling increase nearly 300% compared SOT-23.
RDS(on) 0.10
View
Micro6
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
Units
mW/°C
V/ns
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Units
°C/W
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3/17/04
IRLMS1503
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient (BR)DSS RDS(on) VGS(th) IDSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.037 Max. Units Conditions 250µA V/°C Reference 25°C, 0.100 10V, 2.2A 0.20 4.5V, 1.1A 250µA 10V, 1.1A 24V, 24V, 125°C -100 -20V 2.2A 10V, Fig. 2.2A 6.7, Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.2A, 25°C, 2.2A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig. 150°C
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec.
2.2A, di/dt 150A/µs, V(BR)DSS,
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IRLMS1503
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
2.2A
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLMS1503
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
2.2A
Capacitance (pF)
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us
10ms
Single Pulse
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLMS1503
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
10b. Switching Time Waveforms
Thermal Response thJA
Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLMS1503
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-channel HEXFET® power MOSFET
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IRLMS1503
Package Outline
3.00 (.118 2.80 (.111
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
0.95 (.0375 (1.06 (.042
1.75 (.068 1.50 (.060
3.00 (.118 2.60 (.103
2.20 (.087
0.95 .0375
0.50 (.019 0.35 (.014
0.65 (.025
0.15 (.006
1.30 (.051 0.90 (.036 -C0.15 (.006 MAX. 1.45 (.057 0.90 (.036 0.10 (.004 SURFACES
0.20 (.007 0.09 (.004
0.60 (.023 0.10 (.004
NOTES DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS (INCHES).
Part Marking Information
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IRLMS1503
Tape Reel Information
FEED DIRECTION
NOTES OUTLINE CONFORMS EIA-481 EIA-541.
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 03/04
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IRLMS1503 HEXFET® Power MOSFET Generation Technology Micro6

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