200V 100A 0.018 POWER MOSFET B2VR Power generation

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200V 100A 0.018 POWER MOSFET B2VR Power generation

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APT20M18B2VR A20M18LVR
200V 100A 0.018
POWER
MOSFET
B2VR
Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout.
T-MAX
TO-264
TO-264 Package Faster Switching Lower Leakage
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current
Avalanche Energy Rated
Ratings: 25°C unless otherwise specified.
APT20M18B2VR_LVR UNIT Volts Amps
25°C
5.00 3000
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) Drain-Source On-State Resistance
UNIT Volts
0.018 ±100
(VGS 10V, 50A)
Ohms Volts
5-2004 050-5910
Zero Gate Voltage Drain Current (VDS 200V, Zero Gate Voltage Drain Current (VDS 160V, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT20M18B2VR_LVR
Test Conditions 150V 100A 25°C 150V 100A 25°C UNIT
9880 2320
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
UNIT Amps Volts
(Body Diode) (VGS -49A)
Reverse Recovery Time -49A, 100A/µs) Reverse Recovery Charge -49A, 100A/µs) Peak Diode Recovery
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic Junction Case Junction Ambient UNIT °C/W
0.20
Repetitive Rating: Pulse width limited maximum junction temperature Pulse Test: Pulse width Duty Cycle MIL-STD-750 Method 3471
Starting +25°C, 600µH, Peak 100A dv/dt numbers reflect limitations test circuit rather than device itself. -ID100A di/dt 200A/µs 200V 150°C maximum current limited lead temperature.
Reserves right change, without notice, specifications information contained herein.
0.25
THERMAL IMPEDANCE (°C/W)
0.20
0.15
Note:
Peak Duty Factor t1/t2
5-2004
0.10
050-5910
0.05 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
Typical Performance Curves
Junction temp. (°C) MODEL
APT20M18B2VR_LVR
DRAIN CURRENT (AMPERES)
6.5V 5.5V 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE VOLTAGE OUTPUT CHARACTERISTICS
0.0302
0.00809F
Power (watts)
0.0729
0.0182F
0.0955 Case temperature. (°C)
0.264F
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
+25°C +125°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TRANSFER CHARACTERISTICS
VDS> (ON) (ON)MAX. µSEC. PULSE TEST <0.5 DUTY CYCLE
1.40
NORMALIZED
DRAIN CURRENT (AMPERES)
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
-55°C
VGS=20V DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
0.90
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
050-5910
5-2004
OPERATION HERE LIMITED (ON)
30,000
APT20M18B2VR_LVR
Ciss
DRAIN CURRENT (AMPERES)
100µS
CAPACITANCE (pF)
10,000
Coss 1,000 Crss
=+25°C =+150°C SINGLE PULSE
10mS
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
100A
=+150°C =+25°C
=100V 160V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGE GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAX(B2) Package Outline (B2VR)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 Package Outline (LVR)
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
5-2004
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
050-5910
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
These dimensions equal TO-247 without mounting hole. Dimensions Millimeters (Inches)
Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.

200V 100A 0.018 POWER MOSFET B2VR Power generation

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