SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transi

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transi

Datasheet Thumbnail

Top Searches for this datasheet

2N2646 2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have structure resulting lower saturation voltage, peak-point current valley current well much higher base-one peak pulse voltage. addition, these devices much faster switches. 2N2646 intended general purpose industrial applications where circuit economy primary importance, ideal firing circuits Silicon Controlled Rectifiers other applications where guaranteed minimum pulse amplitude required. 2N2647 intended applications where emitter leakage current peak point emitter current (trigger current) required also triggering high power SCR's.
CASE
MAXIMUM RATINGS
TJ=125°C unless otherwise noted
Symbol
VB1E VB2E IFRMS PTOT TSTG
Ratings
Base Emitter Voltage Base Emitter Voltage Emitter Current Emitter Peak Current Total Power Dissipation Maximum Junction Storage Temperature Range
2N2646
2N2647
+175
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000
Symbol
V(BR)B1E
Ratings
Emitter Reverse Current Base Emitter Breakdown Voltage =100
2N2646 2N2647
COMSET SEMICONDUCTORS
2N2646 2N2647
2N2646 2N2647
Symbol
RBBO
Ratings
Interbase Resistance VB1B2 Intrinsic stand-off ratio VB1B2 Emitter Saturation Voltage VB1B2 Valley Current VB1B2 Peak Current VB1B2 2N2646 2N2647 2N2646 2N2647 2N2646 2N2647
0.56 0.68
0.75 0.82
VE(SAT)
VDRM VRSM applied types continuous basis without incurring damage.
Information furnished believed accurate reliable. However, assumes responsability consequences such information errors that could appear. Data subject change without notice.
COMSET SEMICONDUCTORS

SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transi

Top Searches for this datasheet

Other recent searches