HIGH POWER SILICON TRANSISTORS 2N6253, 2N6254, 2N6371 silicon tra
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2N6253 2N6254 2N6371
HIGH POWER SILICON TRANSISTORS
2N6253, 2N6254, 2N6371 silicon transistors intended wide variety high-power applications. construction these devices renders them highly resistant second breakdown over wide range operating conditions. These devices differ maximum ratings voltage power dissipation. supplied JEDEC TO-3 hermetic steel packages. ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO(SUS)
Collector-Emitter Voltage
Ratings
2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371
Value
Unit
VCBO
Collector-Base Voltage
VCER(SUS)
Collector-Emitter Voltage RBE=100 Collector-Emitter Voltage VBE=-1.5V
VCEV(SUS)
VEBO
Emitter-Base Voltage
Collector Current
Base Current
COMSET SEMICONDUCTORS
2N6253 2N6254 2N6371
Symbol
Ratings
25°C 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371
Value
Unit
Watts
PTOT
Power Dissipation 25°C
Derate Linearly 200°C +200
Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
2N6253 Thermal Resistance, Junction Case 2N6254 2N6371
Value
1.17
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N6253 2N6254 2N6371 2N6253 2N6371 2N6254 2N6253 2N6371 2N6254
Unit
VCE(SAT)
IC=3 IB=0.3 IC=15 IB=5 IC=5 IB=0.5 Collector-Emitter Voltage IC=15 IB=3 IC=8 IB=0.8 IC=16 IB=4
ICEO IEBO
Collector-Emitter Cutoff Current
VCE=25 VCE=60
Emitter-Base Cutoff Current
VEB=-5 VEB=-7
COMSET SEMICONDUCTORS
2N6253 2N6254 2N6371
Symbol
Ratings
Test Condition(s)
VCE=40 VBE=-1.5
Unit
2N6371
TC=150°C
VCE=50 VBE=-1.5 VCE=100 VBE=1.5
2N6253
2N6254
ICEX
Collector Cutoff Current
VCE=45 VBE=-1.5
2N6371
TC=25°C
VCE=55 VBE=-1.5 VCE=100 VBE=1.5
2N6253
2N6254 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371
2.55 1.87
VCEO(SUS)
Collector-Emitter Sustaining IC=0.2 IB=0 Voltage Collector-Emitter Sustaining Voltage IC=0.2 RBE=100 Base-Emitter Voltage
IC=0.1 VBE=-1.5 VCE=4 IC=3 VCE=2 IC=5 VCE=4 IC=16 VCE=4 IC=3 VCE=4 IC=15 VCE=2 IC=5 VCE=4 IC=15 VCE=4 IC=8 VCE=4 IC=16 VCE=4 IC=1
VCER(SUS)
VCEV(SUS)
Base-Emitter Voltage
Static Forward Current transfer ratio
Small Signal Current Gain
Is/b
Transition Frequency Second Breakdown Collector Current tp=1s, rep.
VCE=4 IC=1 VCE=45 VCE=40
Pulse Width Duty Cycle 2.0%
COMSET SEMICONDUCTORS
2N6253 2N6254 2N6371
MECHANICAL DATA CASE TO-3
DIMENSIONS inches 25,45 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 0,04 4,08 0,16
Case
Base Emitter Collector
Information furnished believed accurate reliable. However, assumes responsability consequences such information errors that could appear. Data subject change without notice
COMSET SEMICONDUCTORS
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