AOB420 uses advanced trench technology provide excellent RDS(ON), gate
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AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
AOB420 uses advanced trench technology provide excellent RDS(ON), gate chargeand gate resistance. This device ideally suited high side switch core power conversion. AOB420L (Green Product) offered Lead Free package.
Features
110A RDS(ON) 6.5m (VGS 10V) RDS(ON) 10.0m (VGS 4.5V)
TO-263 D2-PAK
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation
Maximum
Units
TC=25°C
TC=100°C
PDSM TSTG
TC=100°C TA=25°C TA=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOB420, AOB420L
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 5.05 0.72 1320 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.95 25.5 VGS=4.5V, VDS=15V, ID=30A 13.3 VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/µs
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
2.15
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
22.2 20.7 30.7 21.8
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. Power dissipation PDSM based steady-state maximum allowed junction temperature 150°C. value given application depends user's specific board design, maximum temperature 175°C used heatsink allows power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. maximum current rating limited package current capability. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V (Volts) On-Region Characteristics 5.0V 4.0V ID(A) 25°C VGS(Volts) Figure Transfer Characteristics VDS=5V
125°C
VGS=3V
RDS(ON) VGS=10V
Normalized On-Resistance ID=30A VGS=10V
VGS=4.5V
VGS=4.5V
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+02 1.0E+01 125°C
Figure On-Resistance Drain Current Gate Voltage
RDS(ON)
ID=30A
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04
25°C
125°C 25°C
(Volts) Figure On-Resistance Gate-Source Voltage
1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 2400 VDS=15V ID=30A Capacitance (pF) 2000 1600 1200 Coss (Volts) Figure Capacitance Characteristics Crss
Ciss
1000 RDS(ON) limited 10ms 0.1s TJ(Max)=150°C TA=25°C 10µs Power 100µs
0.01
TJ(Max)=150°C TA=25°C
(Amps)
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001 TA=25°C Power Dissipation 0.001 0.01 0.0001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
Document
PD-00081
ALPHA OMEGA
SEMICONDUCTOR, LTD.
Version
Title
AOB420 Marking Description
D2PAK PACKAGE MARKING DESCRIPTION
B420
B420
Standard product
Green product
NOTE: LOGO B420
LOGO PART NUMBER CODE. FOUNDRY ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
AOB420
PART DESCRIPTION Standard product AOB420L Green product
CODE B420 B420
Rev.
ALPHA OMEGA
SEMICONDUCTOR, LTD.
TO-263 (D2PAK) Tape Reel Data
TO-263 (D2PAK) Carrier Tape
FEEDING DIRECTION
TO-263 (D2PAK) Reel
TO-263 (D2PAK) Leader Trailer Orientation
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