SDD303 rectifier diode features nominal 100mm diameter silicon junctio
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SDD303KT 100mm RECTIFIER DIODE 6000
SDD303 rectifier diode features nominal 100mm diameter silicon junction design, manufactured tepoe mlidfuinpoes ut-ifso rcs. esigned specifically current surges appropriate pulse power appli ctos
EI-CHARACTERISTICS Process Maximum
Instantaneous Voltage,
PRINCIPAL
LIMITS RATINGS
Initial
Operating Temperature Range +150oC Rep.Peak Reverse Voltage Current M=100 Repetitive Peak Surge Current (8.3 ms,VR 60000 Maximum Peak Recovery Current oC,140A/us) 1900 snubber required) Maximum Average Current 3500A @Tcase=100oC F(AV)
MECHANICAL OUTLINE
Instantaneous Current, (kA)
89A:
THERMAL IMPEDANCE TIME
Junction Case (DC) Zthj-c degC/W
.001
5.65 (143.5 =3.92 (99.4 D=1.45 (36.8
Rthj-c .007 degC/W .0001 .002 .003 Rthc-s interface
.00001
1000 10000
ELECTRICAL CREEPAGE 40.6 25.4 CLAMPING FORCE REQUIRED 17000 19000
On-Time (milliseconds)
89a:
Great Valley Pkwy. Malvern, 19355
8/10/2001
SDD303KT
LIMITING CHARACTERISTICS RATINGS PARAMETER Average cret Rpttv eeiie peak reverse vlae Repetitve peak reverse cret Forward vlae Non-rep peak srecret Peak recovery cret SYMBOL VRRM TEST CONDITIONS TC=100oC +150oC 50/60 TJ=150o 25oC 22kA ,150oC pulse TJ=150o t=8.3ms t=10ms MAX. VALUES 3500 6000 UNITS
5500A pulse (snubber, 2.3uF/2 ohms) 1385A Tj=150oC snappiness approx.=
Full Cycle Average Power Dissipation degC
Average Power (kW)
AVERAGE POWER DISSIPATION 1000 1500 2000 2500 3000 3500 4000 wave 1322 2268 3367 4632 6071 7696 9514 1215 2092 3096 4232 5508 6931 8508
1000 1500 2000 2500 3000 3500 4000 Average Current (amperes)
89a:
8/10/01
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