AUTOMOTIVE MOSFET IRFR3504PbF IRFU3504PbF HEXFET® Power MOSF
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95315A
AUTOMOTIVE MOSFET
IRFR3504PbF IRFU3504PbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed Tjmax Lead-Free
VDSS RDS(on) 9.2m
Description
Specifically designed Automotive applications, this HEXFET® Power MOSFET utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this product 175°C junction operating temperature, fast switching speed improved repetitive avalanche rating. These features combine make this design extremely efficient reliable device Automotive applications wide variety other applications. D-Pak designed surface mounting using vapor phase, infrared, wave soldering techniques. straight lead version (IRFU series) through-hole mounting applications. Power dissipation levels watts possible typical surface mount applications.
D-Pak IRFR3504
I-Pak IRFU3504
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C Continuous Drain Current, (Silicon limited) Continuous Drain Current, (See Fig.9) Continuous Drain Current, (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.92 Fig.12a, 12b,
Units
(tested) TSTG
W/°C
(1.6mm from case
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
Typ.
Max.
1.09
Units
°C/W
HEXFET(R) registered trademark International Rectifier.
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12/13/04
IRFR/U3504PbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance V(BR)DSS IDSS IGSS td(on) td(off) Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. 0.041 2150 2830 Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 10V, 250µA 10V, 40V, 40V, 125°C -200 -20V Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 1.0V, 1.0MHz 32V, 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 30A, 25°C, 30A, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
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IRFR/U3504PbF
1000
7.0V 6.0V 5.5V 5.0V 4.5V 4.0V
1000
7.0V 6.0V 5.5V 5.0V 4.5V 4.0V
Drain-to-Source Current
Drain-to-Source Current
BOTTOM
BOTTOM
4.0V
4.0V
0.01
20µs PULSE WIDTH 25°C
0.001 1000
20µs PULSE WIDTH 175°C
1000
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
175°C
Forward Transconductance
Drain-to-Source Current
100.00
25°C
10.00
175°C
1.00
25°C 20µs PULSE WIDTH
20µs PULSE WIDTH
0.10 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage
ID,Drain-to-Source Current
Typical Transfer Characteristics
Typical Forward Transconductance Drain Current
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IRFR/U3504PbF
100000 Ciss Cgd, SHORTED Crss Coss
Gate-to-Source Voltage
10000
Capacitance(pF)
Ciss
1000
Coss
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
OPERATION THIS AREA LIMITED (on)
Drain-to-Source Current
Reverse Drain Current
100µsec
25°C 175°C Single Pulse
1msec
10msec 1000
,Source-to-Drain Voltage
VDS, Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFR/U3504PbF
LIMITED PACKAGE
RDS(on) Drain-to-Source Resistance
Drain Current
(Normalized)
Case Temperature
Junction Temperature
Maximum Drain Current Case Temperature
Normalized On-Resistance Temperature
thJC
0.50
Thermal Response
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak 0.01 0.00001 0.0001 0.001 0.01
thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3504PbF
D.U.T
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
VGS(th) Gate threshold Voltage
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
250µA
.2µF .3µF
D.U.T.
Temperature
Current Sampling Resistors
13b. Gate Charge Test Circuit
Threshold Voltage Temperature
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IRFR/U3504PbF
10000
Duty Cycle Single Pulse
1000
Avalanche Current
0.01 0.05
Allowed avalanche Current avalanche pulsewidth, assuming 25°C avalanche losses
0.10
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
(sec)
Typical Avalanche Current Vs.Pulsewidth
Avalanche Energy (mJ)
Single Pulse BOTTOM Duty Cycle
Starting Junction Temperature (°C)
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess jmax. This validated every part type. Safe operation Avalanche allowed long asTjmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed jmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR)
Maximum Avalanche Energy Temperature
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IRFR/U3504PbF
Driver Gate Drive
D.U.T
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
Pulse Width Duty Factor
D.U.T.
18a. Switching Time Test Circuit
td(on) d(off)
18b. Switching Time Waveforms
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IRFR/U3504PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: R120 EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: embly line position indicates "Lead-F ree" PART NUMBER ERNAT IONAL RECT IFIER LOGO
IRFU120 916A
EMBLY CODE
DATE CODE YEAR 1999 WEEK LINE
PART NUMBER ERNATIONAL RECTIF LOGO
IRFU120
CODE DESIGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK SEMBLY CODE
SEMBLY CODE
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IRFR/U3504PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 MBLE 1999 EMBLY LINE Note: embly line ition indicates "Lead-Free" PART NUMBER INTE RNAT IONAL RECT LOGO
IRFU120 919A
EMBLY CODE
CODE YEAR 1999 WEEK LINE
PART NUMBE ERNAT IONAL RECTIF LOGO
IRFU120
SEMBLY CODE
DATE CODE IGNAT LEAD-F PRODUCT (OPTIONAL) YEAR 1999 EMBLY CODE
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IRFR/U3504PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Repetitive rating; pulse width limited
max. junction temperature. (See fig. 11). Limited TJmax, starting 25°C, 0.52mH, 30A, =10V. Part recommended above this value. 30A, di/dt 170A/µs, V(BR)DSS, 175°C. Pulse width 1.0ms; duty cycle
Notes:
Coss eff. fixed capacitance that gives same charging time
Coss while rising from VDSS
Limited TJmax Fig.12a, 12b, typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested this value production.
When mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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