HVU187 Silicon Epitaxial Planar Diode High Frequency Attenuator P
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ADE-208-054C(Z)
HVU187 Silicon Epitaxial Planar Diode High Frequency Attenuator
Preliminary Rev. May. 1993 Features
forward resistance. (rf=5.5 max) Ultra small Resin Package (URP) suitable surface mount design.
Outline
Cathode mark Mark Cathode Anode
Ordering Information
Type HVU187 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol Unit Test Condition *C=200pF,
Both forward reverse direction pulse
Failure criterion 100nA
HVU187
Reverse current
Forward current
10-10
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current Fig.4 Forward resistance Forward current
HVU187
Package Dimensions
Unit:
Cathode Mark 1.25±0.15 0.3±0.15
1.7±0.15 2.5±0.15
Cathode Anode
0.9±0.15
0±0.05
HITACHI Code JEDEC Code EIAJ Code Weight
0.004
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