HVM187S Silicon Epitaxial Planar Diode High Frequency Attenuator
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ADE-208-055C(Z)
HVM187S Silicon Epitaxial Planar Diode High Frequency Attenuator
Preliminary Rev. Jun. 1993 Features
forward resistance. max) MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HVM187S Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature device Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol Unit Test Condition *C=200pF,
Both forward reverse direction pulse
Failure criterion 100nA 60V.
HVM187S
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current Fig.4 Forward resistance Forward current
HVM187S
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011
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