HVM14S Silicon Epitaxial Planar Diode High Frequency Attenuator P
|
|
|
Top Searches for this datasheet
ADE-208-083C(Z)
HVM14S Silicon Epitaxial Planar Diode High Frequency Attenuator
Preliminary Rev. May. 1993 Features
forward resistance. =7.0 max) capacitance. (C=0.25pF typ) MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HVM14S Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature device Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol 0.25 Unit Test Condition *C=200pF,
Both forward reverse direction pulse
Failure criterion 200nA
HVM14S
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage
Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current Fig.4 Forward resistance Forward current
HVM14S
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode
HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011
Other recent searches
STFV4N150 - STFV4N150 STFV4N150 Datasheet
SA-1100 - SA-1100 SA-1100 Datasheet
S-8233A - S-8233A S-8233A Datasheet
RG174 - RG174 RG174 Datasheet
MM4741 - MM4741 MM4741 Datasheet
CGM-18-6005 - CGM-18-6005 CGM-18-6005 Datasheet
BCR505 - BCR505 BCR505 Datasheet
AN8083S - AN8083S AN8083S Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
