HVM14 Silicon Epitaxial Planar Diode High Frequency Attenuator Pr
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ADE-208-082C(Z)
HVM14 Silicon Epitaxial Planar Diode High Frequency Attenuator
Preliminary Rev. May. 1993 Features
forward resistance. =7.0 max) capacitance. (C=0.25pF typ) MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HVM14 Laser Mark Package Code MPAK
(Top View)
Anode Cathode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol 0.25 Unit Test Condition *C=200pF,
Both forward reverse direction pulse.
Failure criterion 200nA
HVM14
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage
Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current Fig.4 Forward resistance Forward current
HVM14
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode
HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011
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