HSM88WK Silicon Schottky Barrier Diode Mixer Rev. Jul. 1994 Featu

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HSM88WK Silicon Schottky Barrier Diode Mixer Rev. Jul. 1994 Featu

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ADE-208-049E(Z)
HSM88WK Silicon Schottky Barrier Diode Mixer
Rev. Jul. 1994 Features
Proof against high voltage. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM88WK Laser Mark Package Code MPAK
(Top View)
Anode Anode Cathode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average rectified Junction temperature Storage temperature Operation temperature device total Symbol Tstg Topr Value +100 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Capacitance deviation Symbol 0.85 0.10 Unit Test Condition C=200pF, Both forward
Forward voltage deviation Capability device Failure Criterion 400nA
reverse direction pulse
HSM88WK
10-2 10-3 Reverse current Forward current
10-5
10-7
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM88WK
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Anode Cathode
HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011

HSM88WK Silicon Schottky Barrier Diode Mixer Rev. Jul. 1994 Featu

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