HSM88AS Silicon Schottky Barrier Diode Balanced Mixer Rev. Jul. 1

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HSM88AS Silicon Schottky Barrier Diode Balanced Mixer Rev. Jul. 1

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ADE-208-046D(Z)
HSM88AS Silicon Schottky Barrier Diode Balanced Mixer
Rev. Jul. 1994 Features
Proof against high voltage. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM88AS Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average rectified Junction temperature Storage temperature Operation temperature device Symbol Tstg Topr Value +100 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Capacitance deviation Symbol 0.85 0.10 Unit Test Condition C=200pF, Both forward
reverse direction pulse
Forward voltage deviation Capability
device Failure Criterion 400nA
HSM88AS
10-2 10-3 Forward current Reverse current
10-5
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM88AS
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode Cathode Anode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011

HSM88AS Silicon Schottky Barrier Diode Balanced Mixer Rev. Jul. 1

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