HSM83 Silicon Epitaxial Planar Diode High Voltage Switching Rev.
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ADE-208-091C(Z)
HSM83 Silicon Epitaxial Planar Diode High Voltage Switching
Rev. Aug. 1995 Features
High reverse voltage. (VR=250V) MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM83 Laser Mark Package Code MPAK
(Top View)
Anode Cathode
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Symbol IFSM Tstg
Value +125
Unit
Average forward current Junction temperature Storage temperature Within 10ms forward surge current.
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance
Reverse recovery time
Symbol
Unit
Test Condition IF=IR=30mA,Irr=3mA,RL=100
HSM83
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM83
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011
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