HSM276S Silicon Schottky Barrier Diode Balanced Mixer Rev.4 Aug.
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ADE-208-039D(Z)
HSM276S Silicon Schottky Barrier Diode Balanced Mixer
Rev.4 Aug. 1994 Features
High forward current, capacitance. HSM276S which interconnected series configuration designed balanced mixer MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM276S Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average forward current Junction temperature Storage temperature device Symbol Tstg Value +100 Unit
Electrical Characteristics 25°C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation Capability Symbol 0.90 0.10 Unit Test Condition
C=200pF, Both forward reverse direction pulse
device Failure Criterrion 100µA 0.5V
HSM276S
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM276S
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode
HITACHI Code
MPAK(1) SC-59A 0.011
JEDEC Code EIAJ Code Weight
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