HSM221C Silicon Epitaxial Planar Diode High Speed Switching Rev.
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ADE-208-028C(Z)
HSM221C Silicon Epitaxial Planar Diode High Speed Switching
Rev. Aug. 1995 Features
capacitance, proof against high voltage. Fast recovery time. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM221C Laser Mark Package Code MPAK
(Top View)
Anode Cathode
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Symbol IFSM Tstg
Value +125
Unit
Average forward current Junction temperature Storage temperature Within forward surge current.
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance
Reverse recovery time
Symbol
0.76 0.88 0.97
Unit
Test Condition 10mA, VR=6V, RL=50
HSM221C
Reverse current
Forward current
Ta=75°C
Ta=50°C Ta=25°C
Ta=-25°C
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM221C
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011
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