HSM198S Silicon Schottky Barrier Diode forVarious Detector,High speed
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ADE-208-090B(Z)
HSM198S Silicon Schottky Barrier Diode forVarious Detector,High speed switching
Preliminary Rev.2 Jun. 1993 Features
Detection efficiency very good. Small temperature coefficient. HSM198S which interconnected series configuration designed balanced mixer MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HSM198S Laser Mark Package Code MPAK
(Top View)
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average forward current Junction temperature Storage temperature device total Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Forward current Capacitance Capacitance deviation Rectifier efficiency Capability Symbol Unit Test Condition
Vin=2Vrms, =40MHz RL=5k CL=20 C=200pF, Both forward reverse direction pulse
device Failure Criterrion
HSM198S
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM198S
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode
HITACHI Code
MPAK(1) SC-59A 0.011
JEDEC Code EIAJ Code Weight
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