HSM126S Silicon Schottky Barrier Diode System Protection Rev. May
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ADE-208-111C(Z)
HSM126S Silicon Schottky Barrier Diode System Protection
Rev. May. 1995 Features
HSM126S which connected series configuration enable protect electric systems from miss-operation against external surge. leakage current. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
(Top View)
Ordering Information
Type HSM126S Mark Package Code MPAK
Cathode Anode Cathode Anode
Absolute Maximum Ratings 25°C)
Item Repetitive peak reverse voltage Average forward current
Non-Repetitive peak forward surge current
Symbol VRRM IFSM Tstg
Value +125
Unit
Junction temperature Storage temperature Sine wave, device total 50Hz half sine wave pulse device
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance device Symbol 0.35 Unit Test Condition
HSM126S
Pulse test Forward current Reverse current
Pulse test
Ta=75°C
Ta=75°C
Ta=25°C
Ta=25°C
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage
Fig.2 Reverse current Reverse voltage
f=1MHz Pulse test Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HSM126S
Example application circuite
(EX. HSM126S) Input Surge
0.35V
Surge
0.35V
Built-in diode
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Cathode Anode Cathode Anode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011
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