HSB88WS Silicon Schottky Barrier Diode Double Balanced Mixer Prel
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ADE-208-026B(Z)
HSB88WS Silicon Schottky Barrier Diode Double Balanced Mixer
Preliminary Rev. Sep. 1993 Features
Small Good surface mounting printed circuit board. Each diode biased. Wideband operation.
Arrangement
Ordering Information
Type HSB88WS Mark Silver Package Code
(Top view)
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average forward current Power dissipation Junction temperature Operation temperature Storage temperature Devices total Symbol Topr Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Symbol 0.85 Unit Test Condition *C=200pF,Both forward reverse
direction pulse.
Capacitance Capacitance deviation Forward voltage deviation ESD-Capability
Failure criterion 50µA Deviation between devices package
HSB88WS
10-2 Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
Capacitance (pF)
10-2
Reverse voltage Fig.3 Capacitance Reverse voltage
HSB88WS
Package Dimensions
0.65
Unit:
0~0.2
0.65
(1.27)
Index mark (silver)
(1.27)
0.05
(4.71)
(1.27)
0.10
0.10 0.06
0.45
Numbers within parentheses reference values.
HITACHI Code JEDEC Code EIAJ Code Weight
0.020
0~0.1
0.16
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