HRW0703A Silicon Schottky Barrier Diode Rectifying Rev. Nov. 1994
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ADE-208-110D(Z)
HRW0703A Silicon Schottky Barrier Diode Rectifying
Rev. Nov. 1994 Features
forward voltage drop suitable high effifiency rectifying. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HRW0703A Laser Mark Package Code MPAK
(Top View)
Anode Cathode
Absolute Maximum Ratings 25°C)
Item Repetitive peak reverse voltage Forward current
Non-Repetitive peak forward surge current
Junction temperature Storage temperature Fig.4 Fig.5
Symbol VRRM* IFSM** Tstg
Value +125
Unit
50Hz sine wave pulse
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Thermal resistance Polyimide Symbol Rth1(j-a) Rth2(j-a)
20hx15wx0.8t
Unit °C/W °C/W
Test Condition 1MHz Polyimide substrate
Ceramic substrate
20hx15wx0.65t
Ceramic
Unit:
Unit:
HRW0703A
Pulse test
Pulse test
Forward current
Ta=75°C
Reverse current
Ta=25°C
Ta=75°C
Ta=25°C
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz Pulse test
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HRW0703A
Forward current Forward current
DC(Forward bias) Duty=2/3 Duty=1/2
Duty=1/3
DC(Forward bias) Duty=2/3 Duty=1/2
Duty=1/3
Rth2=290°C/W Vout
Rth1=390°C/W Vout
Ambient temperature (°C)
Ambient temperature (°C)
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Rth1=390°C/W =0.7A
Duty=2/3 Duty=1/3 Duty=1/2 DC(Reverse bias)
Duty=1/3
Rth2=290°C/W =0.7A
Duty=2/3 DC(Reverse bias)
Duty=1/2
Ambient temperature (°C)
Ambient temperature (°C)
Fig.4 Forward current Ambient temperature (Polyimide substrate)
Fig.5 Repetitive peak reverse voltage Ambient temperature (Ceramic substrate)
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011
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