HRW0302A Silicon Schottky Barrier Diode Rectifying Rev. Nov. 1994

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HRW0302A Silicon Schottky Barrier Diode Rectifying Rev. Nov. 1994

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ADE-208-015E(Z)
HRW0302A Silicon Schottky Barrier Diode Rectifying
Rev. Nov. 1994 Features
forward voltage drop suitable high effifiency rectifying. MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HRW0302A Laser Mark Package Code MPAK
(Top View)
Anode Cathode
Absolute Maximum Ratings 25°C)
Item Repetitive peak reverse voltage Average forward current
Non-Repetitive peak forward surge current
Junction temperature Storage temperature Fig.4 Fig.5 Square waave, Duty (1/2) 10msec half sine wave pulse
Symbol VRRM *,** IFSM Tstg
Value +125
Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Thermal resistance Polyimide
20hx15wx0.8t
Symbol Rth(j-a)
Unit °C/W
Test Condition 1MHzThermal Polyimide substrate
Unit:
HRW0302A
Pulse test Ta=75°C
Pulse test
Forward current
Reverse current
Ta=75°C
Ta=25°C
Ta=25°C
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz Pulse test
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
HRW0302A
Average forward current
Repetitive peak reverse voltage
Rth=340°C/W VRRM =20V 50Hz(Sine wave) Duty
Rth=340°C/W Io=300mA 50Hz(Sine wave) Duty
Ambient temperature (°C)
Ambient temperature (°C)
Fig.4 Average forward current Ambient temperature
Fig.5 Repetitive peak reverse voltage Ambient temperature
VRRM
VRRM
VRRM =20V Const
=300mA Const
Measuring circuit
Measuring circuit
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Cathode HITACHI Code MPAK(1)
JEDEC Code EIAJ Code Weight
SC-59A 0.011

HRW0302A Silicon Schottky Barrier Diode Rectifying Rev. Nov. 1994

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