Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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0.5-µm Low-Noise, Low-Current MesFET (LNLC)
Process Data Sheet
PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
0.5-µm amplifier transistors 0.5-µm switch transistors 0.5-µm diodes Device passivation High-Q passives capacitors resistors GaAs resistors metal layers bridges Substrate vias Operation Communications Space Military Low-noise amplifiers Driver amplifiers amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital analog phase shifters Digital analog attenuators Mixers down converters) Multipliers Switches Oscillators
UNDER
0.5-µm Process Cross Section
Applications
General Description
0.5-µm Low-Noise, Low-Current MesFET (LNLC) process cost-effective (2-metal-interconnect) depletion-mode ion-implant MesFET process low-noise applications through GHz. LNLC process allows switch, amplifier diode integration used mainly low-noise amplifier applications such receivers. Passives include thick-metal interconnect layers, precision resistors, GaAs resistors, capacitors, through-substrate vias. via-under-cap process aides size compaction offers excellent grounds higher frequencies.
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.
0.5-µm Low-Noise, Low-Current MesFET (LNLC)
Process Data Sheet
0.5-µm Low-Noise MesFET Process Details Element Parameter Typical Value Units FETs Idss mA/mm capacitors Capacitors over vias resistors GaAs resistors Vias Substrate density sheet resistance sheet resistance thickness -1.15 mS/mm pF/mm V/sq V/sq
Models Available (Noise) Gate Pitch (µm) Gate Fingers Sizes (µm)
Application Examples
Power Amplifier TGA8349-SCC: TriQuint TGA8349-SCC GaAs monolithic low-noise distributed amplifier designed multi-octave general-purpose gain block. device provides noise figure midband. Typical power output 1-dB gain compression. Low-Noise Amplifier TGA8310-SCC: TriQuint TGA8310-SCC monolithic low-noise distributed amplifier, which operates from GHz. Typically, noise figure with small signal gain This low-noise distributed amplifier suitable variety wideband electronic warfare systems such radar warning receivers, electronic counter measures, decoys, jammers phased array systems.
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.
0.5-µm Low-Noise, Low-Current MesFET (LNLC)
Process Data Sheet
Prototype Wafer Option (PWO) Customer-specific masks Customer schedule wafers delivered Backside process included (process control monitor) qualified wafers
Prototyping Development
0.5-µm Low-Noise, Low-Current MesFET (LNLC) fully released qualified Contact TriQuint visit more information quality reliability.
Process Status
Device libraries circuit elements: FETs Thin-film implanted resistors Capacitors Inductors Agilent design MASC Library
Design Tools
GaAs design classes: Half-day introduction upon request 3-day technical training upon request TriQuint Texas facility
Training
Tiling GDSII stream files including (process control monitor) Design rule checking Layout versus schematic checking Engineering: On-wafer test On-wafer test Thermal analysis Yield enhancement Part qualification Failure analysis Space qualification
Applications Services
Mask making Wafer thinning Wafer dicing Substrate vias die-sort testing die-sort testing Final visual inspection
Manufacturing Services
West Renner Road Richardson, Texas 75080
Semiconductors Communications, Space Military www.TriQuint.com
Page 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications subject change.

Process Data Sheet PLATING PLATE 2000 NITRIDE 0.75 FIRST METAL RE

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