HITACHI ADE-508-010A 4/20/00 Causions Hitachi neither warran

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Hitachi Diodes
HITACHI ADE-508-010A 4/20/00
Causions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Contents
Section Introduction. Section Diode Features. Section Hitachi Diode Product Line Section Quality Control Reliability
Hitachi Diode Manufacturing Process Quality Control Periodical Reliability Tests Periodical Reliability Data
Section Precautions Storage, Transportation Measurement
Precautions Concerning Problems Occurring During Storage, Transportation, Measurement Soldering. Cleaning. Precautions Circuit Mounting. General Notes (General Notes Diodes) Characteristic Parameters Their Relation Reliability.
Section Shipment Service.
Shipment Method. Service System
Section Diode Application Circuits.
Type Attenuator Circuit. Modulator High-Frequency Switching Circuit. Transceiver Switching Circuit. Antenna Switching Circuit. Through Switch. Through Switch.
Section Introduction
diode semiconductor device that basic circuit operation role high frequency electronic switches attenuators. major applications electronic tuning systems, high frequency signal switching, band switching, automatic gain control (AGC) circuits. more equipment becomes dependent electronics, applications diodes will further expand.
Section Diode Features
diode intrinsic semiconductor layer layer) middle junction, which makes diode with P-I-N junction. high frequency variable resistor that change high frequency series resistance (rf) controlling forward current applied junction. diode: Allows high-frequency series resistance vary over wide range while maintaining linear characteristics relation signal means forward direct current small junction capacitance small forward bias maintains excellent isolation high frequencies high electrostatic breakdown strength Figure shows operating principles diode. forward bias applied diode, electrons positive holes pour into layer. electrons positive holes bond, generating those that become forward current those that accumulate layer. Electrons positive holes that accumulate layer function carriers. resistivity layer varies according quantity electrons positive holes, this changes high frequency series resistance (rf).
Forward current flow recombination Forward bias
Positive holes Electrons
Figure
Diode Operation
Figure shows cross section diode structure. silicon substrate high resistivity several hundred ohm-centimeters. part substrate surface layer formed, that layer, metal such aluminum forms electrode.
Anode layer
Cathode
Figure
Cross Section Diode
Section Hitachi Diode Product Line
Table table list main applications electrical characteristics Hitachi diodes, figure shows dimensional drawings packages used. Table Attenuator Product Line Electrical Characteristics 25°C)
(mA) Test Conditions Type HVU187 HVM187S HVM14 HVM14S HVM14SR HVB14S Test Conditions (mA) (pF) Test Conditions 0.25 0.25 0.25 0.25 (MHz) Test Conditions (mA) (MHz) Package MPAK MPAK MPAK MPAK CMPAK
Table High Frequency Switch Product Line Electrical Characteristics 25°C)
(mA) Test Conditions Type Test Conditions (mA) (pF) Test Conditions (MHz) Test Conditions (mA) (MHz) Package
HVD131 HVU131 HVC132 HVD132 HVU132 HVC133
0.85
0.55
HVD133
0.85
0.55
HVU133
0.85
0.55
HVC134 HVC135 HVC136
0.45
0.05 0.10
0.10 0.10
0.13 0.05
0.10
0.425
0.05
0.15
0.10
1.25 0.15
0.15 0.15
0.15
0.16 0.06
1.25
0.05 0.05
0.10 0.10
(0.65)
0.13 0.05
0.55 0.05
CMPAK
0.10
0.05
0.16 0.06
0.15
0.10
(0.95) (0.95)
(0.65)
MPAK
Figure Diode Packages
(0.65) (0.65)
0.425
0.05
0.05
Section Quality Control Reliability
Hitachi Diode Manufacturing Process Quality Control
Hitachi makes every possible effort maintain quality diodes from manufacturing shipment, pays strict attention quality control production process. Meticulous care over each manufacturing process enables timely detection faults, helps maintain stable quality control. Figure shows manufacturing process, figure shows details in-process quality control plastic-sealed type diodes. addition inspection diodes, Hitachi also carries sampling inspections accordance with 9015 standard, provide regular reliability assurance system.
Process
Quality Control
Method
Materials, parts Materials, parts
Materials parts inspection
Characteristics test materials parts semiconductor devices Production equipment, environment,auxiliary materials, worker administration
Sampling judgment, quality level affirmation quality level affirmation
Manufacturing
Screening
Process Quality Control
Sampling judgment, quality level affirmation Classification, inspection
100% inspection Products Delivery inspection
100% inspection external electrical characteristics
Sampling inspection external electrical characteristics
Sampling judgment
Reliability test
Reliability level affirmation
Warehouse Information feedback Quality information Customers Claims Field record Other general quality information
Shipping
Figure
Manufacturing Process Quality Control Flowchart
Flowchart Material Process Process Name Wafer Diffusion
Main Equipment Metallurgical microscope Resistivity meter Metallurgical microscope
Control Item Diffusion depth Resistivity
Control Level wafer/batch
Photolithography
External appearance wafers
Metallization
Metallurgical microscope
External appearance lots/day
Dicing
Pellet grading
Stereoscopic microscope
External appearance units
Stereoscopic microscope
External appearance wafers/lot
Frame bonding wire
Assembly
Tension gage Stereoscopic microscope
Wire bonding time/month machine strength External appearance time/day machine
Molding
Soldering process
Marking
Disconnection Forming Stereoscopic microscope External appearance
Total inspection
Automatic measuring equipment Tension gage
Electrical characteristics Cover tape Peeling strength
units
Packing material
Taping Packing Inspection Warehouse
time/day/machine
Equipment each type inspection
Electrical 9015 characteristics Major 0.1% External appearance, Minor 1.0% Dimensions
Work process work Inspection process
Figure
Diode Quality Control Flowchart
Periodical Reliability Tests
order assure reliability Hitachi diodes, periodical reliability tests carried out.
Table Reliability Assurance Tests (Examples)
Test Item Operating life High-temperature storage Temperature cycle Pressure cooker Solder heat resistance Test Conditions Max, 25°C, 1000 85°C, 85%R.H., 1000 150°C, cycles 121°C, 100%R.H., 260°C,
Periodical Reliability Data
Table MPAK, URP, UFP, Reliability Test Results
Group Mechanical tests Test Item Lead integrity Lead integrity Mechanical shock Drop Variable frequency Environmental tests Temp. cycling Soldering heat Solderability Thermal shock Thermal/humidity cycle Life tests High-temperature storage Low-temperature storage Humidity storage Operating life Test Conditions 15°, bending, cycle 2.5N static load, 1500m/s 0.5ms, Yand directions Dropped onto thick maple plank from 2,000 m/s2, directions -55°C +150°C 260°C 5°C, 235°C 5°C, 100°C, cycles -10°C +65°C, R.H. 90°C, cycles 121°C, 100%R.H., 125°C, 1000 -55°C, 1000 85°C, 85%R.H., 1000 25°C, Max, 1000
0/15 0/15 0/15 0/100 0/15 0/450 0/280 0/360 0/160 0/40 0/360 0/120 0/120 0/400 0/45
Section Precautions Storage, Transportation Measurement
Precautions Concerning Problems Occurring During Storage, Transportation, Measurement
Although general precautions storage transportation electronic components applied they semiconductor devices, latter require certain special precautions addition these. following account includes general precautions. 5.1.1 Storage Semiconductor Devices
following methods storage advisable semiconductor devices. precautions observed, faults electrical characteristics, solderability, external appearance, other attributes occur. some cases, failure also result. Precautions storage follows: storage location should kept within optimum ranges temperature humidity: 35°C to75% R.H. optimal conditions. atmosphere storage location should contain noxious gases, amount dust should minimal. Storage containers should susceptible static electricity. Semiconductor devices should subjected loads. When storing long periods, store non-processed state. When leads have already been formed, corrosion occur bent sections leads. Ensure that sudden temperature changes sufficient cause condensation occur during storage devices. 5.1.2 Precautions Transportation When transporting semiconductor devices their assembly units subsystems, same precautions should taken other electronic components. items listed 5.1.1 5.1.2 must observed. Transportation containers, jigs etc., should accumlated static charge vibration route. Persons handling semiconductor devices should grounded high resistance discharge static electricity that have accumlated their clothing. resistance value should around other person should come between person being discharged ground (GND). When transporting semiconductor devices PCBs, keep mechanical vibration shocks absolute minimum.
5.2.1
Soldering
diodes formed consideration mountability, mounted without modification. When mounting PCB, adhesive used temporarily hold diodes place before solder applied. When diode held adhesive, ensure that subjected undue stress. Using mounter diodes result bending leads, diode package damage. Therefor, make sure that force more than applied, that force applied leads when being mounted, especially case packages. Since diodes come small package, thermal stress from soldering must kept minimum. Observe following conditions. When flow soldering: 260°C max. sec. When using soldering iron: 350°C max. sec. When soldering high temp. atmosphere: 235°C max. sec. soldering iron packages, this causes high level thermal stress. With packages, reflow soldering should used.
5.3.1
Cleaning
Fading Markings Color Codes
clarity markings color-fastness color codes lost cleaning. sure check these after using cleaning agent. 5.3.2 Electrical Mechanical Denaturation, etc.) Characteristics (Discoloration, Deformation,
After cleaning PCB' some corrosive material contained cleaning agent flux remain semiconductor devices, causing corrosion device wiring leads with resulting loss reliability. Thorough cleaning therefore required PCBs. recommended that level purity after cleaning should conform standard below.
Table Level Purity After Cleaning
Item Remaining volume Resistance solvent (after extraction) Standard mg/cm2
Notes: surface area: Both sides mounted components. Extract solvent: Isopropyl alchol vol%) vol%) (Resistance solvent before extraction .cm) Extraction method: Clean both sides with 10ml/2.54 2.54 (minimum minute) Measuring extracted solvent resistance: Conductivity meter MIL-P-28809A details standard.
5.3.3
Ultrasonic Cleaning
Ensure that resonance devices does occur. following conditions recommended. SMDs, etc. Frequency.28 device resonance) Ultrasonic power output.15W/ time) Time.Up sec. Other conditions.Make sure that neither devices come into contact with vibration source.
Precautions Circuit Mounting
Matching circuit design initial standards prerequisite with regard reliability design, while margin must allowed consideration deratings fluctuations characteristics. Reliability problems involve wiring, reactance load, reverse bias, etc.
General Notes General Notes Diodes)
within parameter standards laid down catalog, following precautions which should taken view influence peripheral components, important factors achieving specified level reliability system. Keep temperature peripherals possible avoid high temperatures vicinity semiconductor devices. Keep specified power voltage, input voltage, power dissipation, etc., calculate deratings use. Guard against inputs, outputs, spurious noise power terminals that induce overvoltage. Also guard against strong electromagnetic waves. Ensure that static electricity generated during use. case high-speed devices, provide protector circuit input, guard against electrostatic pulses that could have adverse effect microstructure. Make sure that unbalanced voltages applied when power switched off. example, with circuit's ground terminal floating state, input voltage input power terminal cause excessive stress.
Note electromagnetic wave environments source strong electromagnetic waves vicinity diode alter characteristics diode. example, drop breakdown voltage been reported when portable wireless unit (144 MHz, MHz) with output brought within distance from diode. Please consult Hitachi there risk exposure strong electromagnetic waves operating environment. traceability ensure prompt handling customer queries, following information should provided concerning diode product used: Type name (INT.C/TYPE) (Lot No.) Weekly code (W/C) Items above printed label attached packing case, reel, etc.
Characteristic Parameters Their Relation Reliability
Each semiconductor device characteristic parameters prescribed according function application. Each these parameters predetermined range which should matched. system design, significance these parameters varies great deal depending application, design must project margin initial characteristics regards critical parameters, derating must carried out. former case, device should selected with regard limit operation range system. statistical design method should employed, reliability testing well failure criteria Hitachi semiconductor devices should also taken into consideration. case derating, refer derating applications given under Hitachi Semiconductor Device Reliability. Since majority parameter fluctuations cannot foreseen under conditions use, although design employing initial standards considered justifiable many cases, design with reference failure criteria needed significant system items items with margin. following points consideration with regard parameters. Whether significance parameter extends system failure. state parameter's initial value margin. Does parameter change over time, change direction margin? change permissible device with other devices? redundant design possible? possible introduce statistical design method parameters?
Section Shipment Service
Shipment Method
Hitachi diodes shipped taped form. 6.1.1
Embossed Type Taping
Taping
Packing Form Tape Packing Unit 3000 (Units/reel) Packing Specification Code (Taping Right) Comments withdrawal direction
Appearance MPAK CMPAK
(Marked surface) Tape 3000 (Units/reel) (Taping Right) withdrawal direction
(Marked surface) Tape 4000 (Units/reel) (Taping Right) withdrawal direction
(Marked surface) Tape 8000 (Units/reel) (Taping Right) withdrawal direction
(Marked surface)
Notes: Missing devices 0.2%/ reel; consecutive 0/reel Please contact Hitachi Sales Department information other taping reel specifications.
Service System
Sales, Sales Engineering, Design, Production Inspection Departments have service facilities reply rapidly precisely customers' questions give advice concerning failures resulting from diodes. Hitachi through quality control system, which prevents recurrence failures. Hitachi sure that customers will able Hitachi diodes with confidence. Hitachi's service system outlined briefly figure 6-1.
Customers Claim (failure, information) Sales Dept. Sales Engineering Dept.
Quality Assurance Dept.
Failure analysis
Production Dept. Report
Design Dept.
Countermeasures
Quality Assurance Dept. Report Sales Dept. Sales Engineering Dept. Reply Customers
Confirmation
Figure
Service System
Section Diode Application Circuits
Type Attenuator Circuit
type attenuator circuit shown figure 7-1.
+12V
1000pF
Figure
Type Attenuator Circuit
Modulator High-Frequency Switching Circuit
Figure shows high-frequency switching circuit that emphasizes isolation characteristics.
diode (DUT) 1000pF 1000pF 1000pF 1000pF diode (DUT) 1000pF
Continuous voltage (Vs)
Figure
Modulator High-Frequency Switching Circuit
Transceiver Switching Circuit
Figure shows simple high-frequency switching circuit transceiver.
1000pF 1000pF Transmitter
1000pF Antenna
diode (DUT)
diode (DUT) Receiver Bandswitch diodes (HSC277)
1000pF
1000pF
Continuous voltage
Figure
Transceiver Circuit
Antenna Switching Circuit
Figure shows antenna switching circuit.
Figure
Antenna Switching Circuit
Through Switch
circuit figure high-frequency switch used VCRs. more diodes used, lower resistance when power turned better high-frequency shutoff characteristics.
Figure
Through Switch Circuit
Through Switch
circuit figure standard through switching circuit that uses diode.
Figure
Standard Through Switch Circuit
HVU187
Silicon Epitaxial Planar Diode High Frequency Attenuator
Features
forward resistance. max) Ultra small esin ackage (URP) suitable surface mount design.
Ordering Information
Type HVU187 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
Symbol
Unit
Test Condition Both forward reverse direction pulse.
Notes Failure criterion
HVU187
Main Characteristic
Reverse current
Forward current
10-6
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Capacitance (pF)
Forward resistance
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVM187S
Silicon Epitaxial Planar Diode High Frequency Attenuator
Features
forward resistance. max) MPAK package suitable high density surface mounting high speed assembly.
Ordering Information
Type HVM187S Laser Mark Package Code MPAK
Arrangement
Cathode Anode Cathode Anode
(Top View)
HVM187S
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: device. Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note:
Symbol
Unit
Test Condition Both forward reverse direction pulse
Failure criterion device.
HVM187S
Main Characteristic
Reverse current
Forward current
10-6
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Capacitance (pF)
Forward resistance
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVM14 HVM14S HVM14SR
Silicon Epitaxial Planar Diode High Frequency Attenuator
Features
forward resistance. max) capacitance. 0.25 typ) MPAK package suitable high density surface mounting high speed assembly.
Ordering Information
Type HVM14 HVM14S HVM14SR Laser Mark Package Code MPAK MPAK MPAK
Arrangement
Anode Cathode Cathode2 Anode1 Cathode1 Anode2
Anode Cathode Cathode Anode
(Top View) HVM14
(Top View) HVM14
(Top View) HVM14
HVM14SR
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol Tstg
Value +125
Unit
device total. (HVM14S HVM14SR)
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note:
Symbol
0.25
Unit
Test Condition Both forward reverse direction pulse
Failure criterion device. (HVM14S HVM14SR)
HVM14SR
Main Characteristic
10-5
Reverse current
Forward current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance
(pF)
Reverse voltage
Forward current
Fig.3 Capacitance Reverse voltage
Fig.4 Forward resistance Forward current
HVB14S
Silicon Epitaxial Planar Diode High Frequency Attenuator
Features
forward resistance. max) capacitance. 0.25 typ) CMPAK package suitable high density surface mounting high speed assembly.
Ordering Information
Type HVB14S Laser Mark Package Code CMPAK
Arrangement
Cathode Anode Cathode Anode
(Top View)
HVB14S
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol Tstg
Value +125
Unit
device total.
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note:
Symbol
0.25
Unit
Test Condition Both forward reverse direction pulse
Failure criterion 200nA device.
HVB14S
Main Characteristic
10-5
Reverse current
Forward current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance
(pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVC131 HVD131 HVU131
Silicon Epitaxial Planar Diode High Frequency Switch
Features
capacitance.(C max) forward resistance. max) Suitable surface mount design small size package line
Ordering Information
Type HVC131 HVD131 HVU131 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Note: Symbol Unit Test Condition
Please mount soldering reflow. Reflow condition: 235°C max, seconds soldering iron because soldering causes package heat stress.
HVU131
Main Characteristic
Forward current
10-8
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage
Forward current
Fig.3 Capacitance Reverse voltage
Fig.4 Forward resistance Forward current
HVC132 HVD132 HVU132
Silicon Epitaxial Planar Diode High Frequency Switch
Features
capacitance. max) forward resistance. max) Suitable surface mount design small size package line
Ordering Information
Type HVC132 HVD132 HVU132 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol Unit Test Condition
Note Please mount soldering reflow. (Reflow condition: 235°C max, seconds soldering iron because soldering causes package heat stress.
HVU132
Main Characteristic
10-4
Forward current Reverse current
Forward voltage
Reverse voltage
Fig.1 Forward current Forward voltage
Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVC133 HVD133 HVU133
Silicon Epitaxial Planar Diode High Frequency Switch
Features
capacitance. max) forward resistance. max) Suitable surface mount design small size package line
Ordering Information
Type HVC133 HVD133 HVU133 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse voltage Reverse current Forward voltage Capacitance Symbol Forward resistance 0.55 0.85 Unit Test Condition 2mA,
Note Please mount soldering reflow. Reflow condition: 235°C max, seconds soldering iron because soldering causes package heat stress.
HVU133
Main Characteristic
10-4
Forward current Reverse current
10-14
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage
Forward current Fig.4 Forward resistance Forward current
Fig.3 Capacitance Reverse voltage
HVC134
Silicon Epitaxial Planar Diode High Frequency Switch
Features
capacitance. max) forward resistance. max) Ultra small Flat Package (UFP) suitable surface mount design.
Ordering Information
Type HVC134 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
Symbol
Unit
Test Condition Both forward reverse direction pulse
Notes Failure criterion
HVC134
Main Characteristic
10-4
Forward current
Reverse current
10-10
10-12
10-13
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVC135
Silicon Epitaxial Trench Diode High Frequency Switch
Features
Adopting trench structure improves capacitance. max) forward resistance. max) operation current. Ultra small Flat Package (UFP) suitable surface mount design stable characteristics high frequency.
Ordering Information
Type HVC135 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
Symbol
Unit
Test Condition Both forward reverse direction pulse.
Note: Failure criterion
HVC135
Main Characteristic
10-4
Forward current
Reverse current
10-11
10-13
10-14
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
HVC136
Silicon Epitaxial Trench Diode High Frequency Switch
Features
Adopting trench structure improves capacitance. 0.45 max) forward resistance. max) operation current. Ultra small Flat Package (UFP) suitable surface mount design stable characteristics high frequency.
Ordering Information
Type HVC136 Laser Mark Package Code
Absolute Maximum Ratings 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability Note:
Symbol
0.45
Unit
Test Condition Both forward reverse direction pulse.
Failure criterion
HVC136
Main Characteristic
10-8
Forward current
Reverse current
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage
Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current
Fig.4 Forward resistance Forward current
Hitachi Diodes Application Note
Publication Date: Edition, August 1995 Edition, March 2000 Published Electronic Devices Sales Marketing Group Semiconductor Integrated Circuits Hitachi, Ltd. Edited Technical Documentation Group Hitachi Kodaira Semiconductor Co., Ltd. Copyright Hitachi, Ltd., 1995. rights reserved. Printed Japan.

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