ADE-208-1222 1st. Edition Mar. 2001 Features Low-voltage drive (2

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ADE-208-1222 1st. Edition Mar. 2001 Features Low-voltage drive (2

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HAT1046R
ADE-208-1222 1st. Edition Mar. 2001 Features
Low-voltage drive (2.5 drive) resistance Capable gate drive on-resistance DS(on) typ.
External View
SOP-8
Source Gate Drain
MOS1
MOS2
HAT1046R
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Permissible channel loss Symbol VDSS VGSS (pulse)* Pch*2 Pch* Channel temperature Storage temperature Notes: Tstg
Value +150
Unit
duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm), Value Tch=25°C,
HAT1046R
Electrical Characteristics
Item Drain source breakdown voltage Gate source cutoff current Symbol V(BR)DSS -0.4 1630 -0.85 ±0.1 -1.4 -1.11 Unit diF/dt A/µs Test conditions -2.5
Zero gate voltage drain current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance VGS(off) |yfs| RDS(on) RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse measurement Ciss Coss Crss td(on) td(off)
HAT1046R
Main Characteristics
Power Temperature Derating Test Condition When using glass epoxy board (FR4 mm),
-100 -0.3 -0.1
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited RDS(on)
Note
(°C)
-0.03
Ambient Temperature
-0.01 -0.1 -0.3 Drain source Voltage
25°C shot Pulse Drive Operation
-100
Note When using glass epoxy board (FR4
Typical Output Characteristics
-2.5
Typical Transfer Characteristics -25°C 25°C 75°C
Drain Current
Drain current
Pulse Test
Pulse Test -1.5
Drain Source Voltage
Gate Source Voltage
HAT1046R
Drain Source Saturation Voltage Gate Source Voltage Drain Source State Resistance RDS(on) -0.5 Drain Source Saturation Voltage VDS(on) Pulse Test Static Drain Source State Resistance Drain Current
Pulse Test
0.05
-0.4
-0.3
-2.5
-0.2 -0.1
0.02 0.01
0.005
Gate Source Voltage
Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test 0.08 0.06 0.04 0.02 -2.5
Forward Transfer Admittance Drain Current -25°C
75°C -0.2 Pulse Test -0.5 Drain Current 25°C
Case Temperature (°C)
HAT1046R
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) 25°C Capacitance (pF) 5000 2000 1000 -0.5 Reverse Drain Current Drain Source Voltage Crss Ciss Coss Typical Capacitance Drain Source Voltage
-0.2
Dynamic Input Characteristics
Reverse Drain Current Source Drain Voltage
Drain Source Voltage
Reverse Drain Current
Gate-source voltage
Gate Charge (nc)
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
HAT1046R
Switching Characteristic 1000 d(off) d(on) =-10V duty -0.2 -0.5
Switching Time (ns)
Drain Current
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on)
td(off)
HAT1046R
Normalized Transient Thermal Impedance Pulse Width drive Operation) Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
ch-f(t) ch-f 125°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
1000
10000
Pulse Width
Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
ch-f(t) ch-f 166°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
Pulse Width
1000
10000
HAT1046R
Package Dimensions
Unit:
5.0max. 4.8min.
0~8° 0.15max. 1.27max. 0.4min.
6.2max. 5.8min. 4.0max. 3.8min.
0.25max. 0.19min. 1.75max. 1.35min.
0.51max. 0.33min.
0.15
0.25
0.25max. 0.10min.
0.75max. 1.27typ.
Hitachi Code JEDEC EIAJ
FP-8DA
HAT1046R
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89)
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
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ADE-208-1222 1st. Edition Mar. 2001 Features Low-voltage drive (2

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