ADE-208-1238F 7th. Edition Jan. 2001 Features on-resistance Capab

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ADE-208-1238F 7th. Edition Jan. 2001 Features on-resistance Capab

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HAT1041T
ADE-208-1238F 7th. Edition Jan. 2001 Features
on-resistance Capable gate drive drive current High density mounting
Outline
TSSOP-8
Drain Source Gate
HAT1041T
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS D(pulse) Tstg
Note2 Note1
Ratings -6.0 -6.0 +150
Unit
10µs, duty cycle When using glass epoxy board (FR4 mm), PW10s
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source leak current Symbol V(BR)DSS -0.4 0.020 0.035 1850 -0.85 ±0.1 -1.4 0.026 0.045 -1.10 Unit =-6.0A, Note3 -6.0A, diF/ =20A/µs Test Conditions -10mA, ±12V, -10V, -1mA 4.5V Note3 -3A, -2.5V Note3 -3A, -10V Note3 -10V 1MHz -10V
Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
HAT1041T
Main Characteristics
Typical Output Characteristics Typical Transfer Characteristics Pulse Test
Pulse Test Drain Current -1.5
Drain Current
-25°C 25°C 75°C Gate Source Voltage
Drain Source Voltage
Static Drain Source State Resistance DS(on)
Drain Source State Resistance DS(on)
Static Drain Source State Resistance Drain Current Pulse Test 0.05 0.02 -4.5 0.01 -2.5
Static Drain Source State Resistance Temperature Pulse Test 0.08
0.06 -2.5
0.04
0.005
0.02 -4.5
0.002 -0.2
-0.5 Drain Current
Case Temperature (°C)
HAT1041T
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance
0.05
0.01
0.02 0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
10000
Pulse Width
HAT1041T
Package Dimensions January, 2001
Unit:
3.00 3.30 4.40 *0.22 +0.08 -0.07 0.20 0.06 0.65 0.13 0.805 *0.17 0.05 0.15 0.04 1.10 6.40 0.20 0.50 0.10
0.10
0.07 +0.03 -0.04
*Dimension including plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Mass (reference value)
TTP-8D
HAT1041T
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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ADE-208-1238F 7th. Edition Jan. 2001 Features on-resistance Capab

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